This role focuses on the design and development of package and interconnect methods for Renesas’s AI/Datacenter Infrastructure Power packaging needs, specifically Smart Power Stages, Vertical Power Stages, Power Modules & Discrete FET packages. The scope also involves Wide Bandgap (WBG) development, including SiC & GaN, along with DBC, AMB substrates, and advanced interconnect technologies. The position requires managing package technology development, R&D, global OSAT management for new package development and product qualification, technology roadmap definition, R&D budget management, and customer adoption programs. Knowledge of wafer level, flip-chip, multi-chip module, and power devices is beneficial. The role involves benchmarking, selecting, and qualifying materials, processes, and subcontractors (OSAT) or contract manufacturers (CM). It also includes developing and optimizing processes with OSAT/CM, working with product groups and the reliability team for package and process qualification, resolving process integration issues, establishing production controls, and ensuring a smooth transition into production with ramp-up monitoring. The Director will also monitor and resolve process issues in the production phase to ensure high-quality shipments, develop and maintain technical expertise in power SiP/modules, wafer-level packaging, and flip-chip interconnects, participate in packaging roadmap development, and address customer complaints by collaborating with Marketing, Product groups, Quality, and Operations organizations. Establishing and maintaining package design rules is also a key responsibility.
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Job Type
Full-time
Career Level
Director
Education Level
Ph.D. or professional degree