Staff Interface Design Engineer, HBM

Micron Technology•Folsom, CA
•$181,000 - $415,000•Onsite

About The Position

The Staff Interface Design Engineer will join Micron’s HBM Design Architecture team within the HBM DRAM Engineering Group. The team works across design, technology, and manufacturing to deliver next-generation HBM solutions for AI and machine-learning workloads. In this full-time, onsite role, the engineer provides technology support for the design and development of advanced HBM DRAM products. The position bridges internal design teams, foundries, and technology development groups, translating advanced process capabilities into scalable, high-performance architectures. The work affects product performance, power efficiency, reliability, and the long-term HBM roadmap, and supports AI-enabled solutions intended to improve efficiency and decision-making. Candidates are expected to have proven experience in at least three of the five focus areas: foundry interface and technology alignment; circuit simulation and analysis; test-chip and silicon validation; PDK and design enablement; and AI-enabled productivity and efficiency improvement.

Requirements

  • BS, MS, PhD, or equivalent experience in Electrical Engineering, Computer Engineering, or a related field.
  • At least 6 years of semiconductor industry experience.
  • Solid understanding of advanced semiconductor technology development.
  • Strong grasp of advanced CMOS technology nodes, FinFET devices, and process integration.
  • Hands-on experience with HSPICE simulations, device characterization, standard cell benchmarking, PPA analysis, parasitic extraction, and physical verification.
  • Experience driving AI-enabled engineering practices and automation to improve the efficiency of DTCO analysis, foundry collateral evaluation, PDK enablement, benchmarking, and collaboration across build teams.
  • Proven experience in at least three of the five stated focus areas.

Nice To Haves

  • Experience working directly with leading foundries such as TSMC, Samsung, Intel Foundry Services, or GlobalFoundries.
  • Experience with memory products, including DRAM, HBM, or SRAM.
  • Knowledge of TSV technologies, advanced packaging, reliability modeling and aging simulations, advanced BEOL technologies, and PDK development and validation.
  • Ability to apply AI tools to summarize, analyze, and extract insights from PDK documentation, Design Rule Manuals, reliability reports, foundry collateral, and silicon characterization data.
  • Experience leading technology pathfinding and node selection activities.

Responsibilities

  • Support the design and development of advanced HBM DRAM products.
  • Bridge internal design teams, foundries, and technology development groups to translate process capabilities into scalable, high-performance architectures.
  • Contribute to work affecting performance, power efficiency, reliability, and the HBM roadmap.
  • Work in at least three of the stated focus areas: foundry interface and technology alignment; circuit simulation and analysis; test-chip and silicon validation; PDK and design enablement; AI-enabled productivity and efficiency improvement.
  • Drive AI-enabled engineering practices and automation to improve efficiency in DTCO analysis, foundry collateral evaluation, PDK enablement, benchmarking, and collaboration across build teams.

Benefits

  • Medical insurance plans
  • Dental insurance plans
  • Vision insurance plans
  • Income-protection benefit programs for illness or injury
  • Paid family leave
  • Paid time off
  • Paid holidays
  • Bonuses and equity may be additional compensation
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