Intern - Advanced DRAM Process Integration

Micron • Boise, ID

12d

About The Position

The 3D DRAM Technology Development organization is responsible for advancing next-generation memory technologies that enable future computing innovations. Engineers within this team work in a brand new 300mm R&D facility, collaborating across process development, characterization, reliability, design, and simulation fields to drive memory scaling and manufacturability. As a 3D DRAM Process Integration Engineer Intern, you will support the development of next-generation DRAM technologies with a focus on device performance, reliability, and manufacturability. This role involves working on advanced memory structures, including charge storage devices and thin-film transistors, while partnering with multi-functional engineering teams to solve challenging integration and circuit-related issues. The ideal candidate will have a strong foundation in semiconductor device fabrication, materials science, and device physics, combined with data-driven problem-solving skills and a passion for technology innovation.

Requirements

• Currently pursuing a PhD in Materials Science, Physics, Chemical Engineering, or a related technical field.
• Research experience in semiconductor device fabrication, electrical characterization, material characterization, or a related semiconductor field.
• Demonstrated understanding of semiconductor device physics and process integration concepts.
• Experience designing experiments and analyzing technical data to support engineering decisions.
• Strong written and verbal communication skills with the ability to present complex technical findings clearly.

Nice To Haves

• Experience with advanced DRAM, memory devices, thin-film transistors, or related semiconductor technologies.
• Proficiency in statistical data analysis, modeling, and interpretation of semiconductor process and device performance data.
• Experience applying Artificial Intelligence (AI), Generative AI, or AI-Enabled tools to technical research, data analysis, or engineering productivity improvements.
• Demonstrated ability to work effectively in multi-functional research and development environments.
• Strong project management, problem-solving, and technical leadership capabilities.

Responsibilities

• Contribute to the development of next-generation DRAM technologies, including advanced memory device components such as charge storage structures and thin-film transistors.
• Design, complete, and analyze experiments within the R&D fabrication environment to support technology development objectives.
• Collaborate with process development, product engineering, design, probe, yield enhancement, characterization, and reliability teams to resolve performance and yield challenges.
• Analyze inline, electrical, and probe data to identify operating mechanisms, variability sources, reliability risks, and optimization opportunities.
• Leverage approved Artificial Intelligence (AI) and AI-Assisted tools to support engineering analysis, data interpretation, productivity improvements, and technology development activities.

Benefits

• Choice of medical, dental and vision plans
• Benefit programs that help protect your income if you are unable to work due to illness or injury
• Paid family leave
• Robust paid time-off program
• Paid holidays

What This Job Offers

• Job Type: Full-time
• Career Level: Intern
• Education Level: Ph.D. or professional degree