Principal Design Engineer

QorvoHiawatha, IA
$170,300 - $221,500Onsite

About The Position

We are looking for an experienced RF power amplifier (PA) design engineer in our advanced development team who will deliver new and innovative solutions for cellular and Wi-Fi applications in frequency range from 700 MHz to 7 GHz. The successful candidate will be responsible for the feasibility study, design, simulation, and layout of the GaAs PA IC as well as the accompanying laminate/IPD based matching networks using ADS and various EM simulation tools to meet simultaneous power, bandwidth, efficiency, and linearity requirements. This position also requires hands-on RF tuning skills at the bench alongside technicians and applications engineers to optimize the PA performance, and extensive data analysis skills to validate the design over PVT and VSWR. The successful candidate is also expected to mentor others in design concepts and best practices, and publish novel design work through internal/external reports, seminars, conferences and invention disclosures. This is a high visibility position and you will have the opportunity to interface with various product organizations and cross-functional teams in the company.

Requirements

  • Demonstrated experience in cellular or Wi-Fi PA design using GaAs HBT based technologies
  • Strong understanding of various high-efficiency and high-linearity PA design techniques and architectures including load and supply modulation
  • Solid knowledge of GaAs HBT device physics over temperature, voltage/current and frequency
  • Extensive experience in linear/nonlinear ADS simulations, and EM simulations through FEM, Momentum and/or HFSS
  • Strong background in RF/microwave engineering, electromagnetics, analog circuits and wireless communications
  • Experienced with RF/microwave test equipment such as network analyzer, probe station, source/load pull system, and signal sources/analyzers that deal with modulated signals
  • Strong teamwork, communication, organization, and documentation skills
  • Ability to work in a fast-paced environment to meet customer needs and schedules
  • Detail oriented to ensure delivery of high yielding designs with good margin to specifications
  • Bachelor’s degree with 8+ years of related work experience and/or post-graduate degree

Nice To Haves

  • Experience designing RFIC/MMIC and analog circuit blocks such as PAs, switches, LNAs, phase shifters, and/or attenuators using pHEMT, SiGe and/or SOI/CMOS-based technologies
  • Experience with various PA linearization techniques
  • Knowledge of Cadence and AWR Microwave Office schematic capture, layout and simulation tools
  • Knowledge of data analysis and programming tools such as MATLAB, JMP, Spotfire, and AEL
  • Published authorship in technical journals, conferences and/or magazines
  • 15+ years of experience with M.S. or Ph.D. degrees

Responsibilities

  • Feasibility study, design, simulation, and layout of GaAs PA IC
  • Design of accompanying laminate/IPD based matching networks using ADS and various EM simulation tools
  • Meet simultaneous power, bandwidth, efficiency, and linearity requirements
  • Hands-on RF tuning skills at the bench to optimize PA performance
  • Extensive data analysis skills to validate the design over PVT and VSWR
  • Mentor others in design concepts and best practices
  • Publish novel design work through internal/external reports, seminars, conferences and invention disclosures
  • Interface with various product organizations and cross-functional teams

Benefits

  • Competitive base salary commensurate with experience: $170,300.00 - $221,500.00
  • Total Rewards package
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