Vertical Semiconductor, a venture-backed MIT spin-out, is leading the development of vertical gallium nitride (GaN) power electronics to build the foundational power layer for the next generation of compute and AI. The engineering team works across the full lifecycle of our vertical GaN power devices, from architecture and process integration through modeling, characterization, and reliability. This posting is for engineers with a background in wide-bandgap (WBG) power semiconductors, including GaN, SiC, or related technologies, at any career stage. Where you spend most of your time will depend on your background and where the team needs help most. This could mean device modeling and simulation, on-wafer characterization, process integration, or failure analysis and reliability work. If you have hands-on experience with wide-bandgap power devices and want to build a new device technology from the ground up, we want to hear from you.
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Job Type
Full-time
Career Level
Entry Level
Education Level
Ph.D. or professional degree