Wide Bandgap Process Integration Engineer NCG

Texas Instruments•Dallas, TX

About The Position

Texas Instruments is seeking an innovative GaN Process Integration Engineer to join its Gallium Nitride (GaN) Technology Development Team. The role supports development and scaling of GaN power process technologies for high-volume manufacturing, contributing to devices designed for high efficiency, fast switching, and reliable systems. As part of the Advanced Technology Development (ATD) team, the position leads development, characterization, and optimization of GaN power devices and collaborates closely with fab and manufacturing teams, business units, and Kilby Labs. The work requires in-depth knowledge of III-nitride materials, device physics, and reliability. It includes device simulation, design and layout; process-flow development and DOE execution; manufacturability and reliability collaboration; and root-cause investigation to improve devices, processes, reliability, and yield. The role calls for understanding of power FETs, semiconductor device physics, analog silicon and GaN HEMT process flows and process physics, as well as electrical and materials characterization and statistical data analysis. Hands-on laboratory experience, problem-solving ability, and strong written and verbal communication are important for working across multiple teams.

Requirements

PhD in Electrical Engineering, Electrical and Computer Engineering, Materials Engineering, Physics, or a related degree.
Research experience in GaN or compound semiconductor device/process development.
Minimum cumulative GPA of 3.0/4.0.
Strong understanding of power FETs and other relevant semiconductor device physics.
Understanding of typical analog silicon and GaN HEMT process flows and underlying process physics.
Knowledge of electrical and materials characterization methodologies and statistical data analysis.
Strong hands-on laboratory experience and problem-solving skills.
Excellent verbal and written communication skills; the role requires interfacing with multiple teams.

Nice To Haves

Familiarity with GaN-on-Si technology for power switching applications.
Experience with fab tools and process modules or integration.
Strong communication and data analysis skills.
Knowledge of device physics, reliability mechanisms, and packaging interaction.
Ability to work in teams and collaborate effectively with people in different functions.
Ability to take initiative and drive for results.
Sound decision-making capabilities and ability to prioritize tasks and adapt accordingly.

Responsibilities

Lead development, characterization, and optimization of GaN power devices.
Perform GaN device simulations (TCAD), device design, and layout.
Develop robust process flows, drive design-of-experiment (DOE) execution, and solve integration challenges.
Collaborate with fab and manufacturing engineers to ensure device manufacturability.
Collaborate with reliability engineers to meet device reliability requirements.
Investigate failure root causes to improve devices, processes, reliability, and yield.