Wide Bandgap Process Integration Engineer NCG

Texas Instruments • Dallas, TX

1d

About The Position

Texas Instruments is seeking an innovative GaN Process Integration Engineer for its Gallium Nitride Technology Development Team. The position focuses on leading the development, characterization, and optimization of GaN power devices, and on developing and scaling GaN power process technologies for high-volume manufacturing. As part of the Advanced Technology Development team, the engineer collaborates with fab and manufacturing teams, business units, and Kilby Labs to deliver high-performance, reliable, and manufacturable devices. The work includes GaN device simulation using TCAD, device design and layout, process-flow development, design-of-experiment execution, integration problem-solving, reliability collaboration, and failure root-cause investigations to improve devices, processes, reliability, and yield. The role requires knowledge of III-nitride materials, device physics, reliability, semiconductor process flows, characterization, and statistical data analysis, along with hands-on laboratory skills and strong communication abilities.

Requirements

• PhD in Electrical Engineering, Electrical & Computer Engineering, Materials Engineering, Physics, or a related degree.
• Research experience in GaN or compound semiconductor device/process development.
• Minimum cumulative GPA of 3.0/4.0.
• Strong understanding of power FETs and relevant semiconductor device physics.
• Understanding of typical analog silicon and GaN HEMT process flows and their underlying process physics.
• Knowledge of electrical and materials characterization methodologies and statistical data analysis.
• Strong hands-on laboratory experience and problem-solving skills.
• Excellent verbal and written communication skills.

Nice To Haves

• Familiarity with GaN-on-Si technology for power switching applications.
• Experience with fab tools and process modules or integration.
• Strong communication and data analysis skills.
• Knowledge of device physics, reliability mechanisms, and packaging interaction.
• Ability to work in teams and collaborate effectively with people in different functions.
• Ability to take initiative and drive for results.
• Sound decision-making capabilities and ability to prioritize tasks and adapt accordingly.

Responsibilities

• Lead development, characterization, and optimization of GaN power devices.
• Develop and scale GaN power process technologies for high-volume manufacturing.
• Perform GaN device simulations using TCAD and contribute to device design and layout.
• Develop robust process flows, drive design-of-experiment (DOE) execution, and solve integration challenges.
• Collaborate with fab and manufacturing engineers to ensure device manufacturability.
• Collaborate with reliability engineers to meet device reliability requirements.
• Investigate failure root causes to improve devices, processes, reliability, and yield.
• Interface and collaborate with multiple teams across fab/manufacturing, business units, and Kilby Labs.

What This Job Offers

• Job Type: Full-time
• Career Level: Senior
• Education Level: Ph.D. or professional degree