Principal / Senior Principal Microelectronics Device Engineer

Northrop Grumman•Manhattan Beach, CA
•$114,000 - $213,400•Onsite

About The Position

Northrop Grumman’s Microelectronics Center is hiring a Microelectronics Device Engineer to support research and development of advanced microelectronics products at its Space Park Foundry in Redondo Beach, California. The foundry designs, manufactures, and tests semiconductor products for internal and commercial customers and emerging technology programs, with capabilities in Gallium Arsenide, Indium Phosphide, and Gallium Nitride, as well as development in semiconductor materials, processes, devices, and 3D heterogeneous integration. The selected candidate will lead development and maturation of novel III-V semiconductor technologies, including advanced GaN and InP technology nodes, advancing technologies from early research and development through production. Work includes millimeter-wave transistor design and simulation, experimental device development, root cause analysis, and RF device characterization. The role involves working in a laboratory and collaborating with process engineers, circuit designers, and test engineers in multidisciplinary teams. The position may be filled at the Principal or Senior Principal level. Relocation assistance may be available. Travel is approximately 10% of the time. A clearance is not required to start, but the candidate must be able to obtain and maintain a DoD Secret clearance.

Requirements

  • Bachelor of Science in Electrical Engineering, Chemical Engineering, Materials Engineering, Chemistry, Physics, or another related STEM discipline.
  • For the Principal level: 5 years of relevant experience with a bachelor’s degree, 3 years with a master’s degree, or 0 years with a Ph.D.
  • For the Senior Principal level: 8 years of relevant experience with a bachelor’s degree, 6 years with a master’s degree, or 3 years with a Ph.D.
  • Expertise in solid-state or semiconductor materials physics.
  • Demonstrated expertise in compound semiconductor device physics.
  • Experience with semiconductor device processing.
  • Experience in project or team leadership roles.
  • Ability to obtain and maintain a DoD Secret clearance.
  • U.S. citizenship required.

Nice To Haves

  • Ph.D. in Electrical Engineering, Materials Engineering, or Physics.
  • Demonstrated expertise with one or more of the following: diodes, field effect transistors (FETs), high electron mobility transistors (HEMTs), or heterojunction bipolar transistors (HBTs).
  • Direct experience with GaN and/or InP transistor development.
  • Track record of applying scientific principles to advance device performance and achieve engineering objectives.
  • Experience with technology maturation and transition from R&D to manufacturing.
  • Experience with MMIC fabrication.
  • Exposure to MMIC design.
  • Excellent communication and interpersonal skills, and ability to interface with employees and management at all levels.
  • Proven track record leading multidisciplinary teams.
  • Ability to prioritize and manage tasks efficiently in a dynamic environment.
  • Professional accomplishments and publication record related to semiconductor technology R&D and maturation.

Responsibilities

  • Lead development and maturation of novel III-V semiconductor technologies, including advanced GaN and InP technology nodes.
  • Advance new technologies from early research and development through production.
  • Perform millimeter-wave transistor design and simulation.
  • Conduct experimental device development, root cause analysis, and RF device characterization.
  • Collaborate with process engineers, circuit designers, and test engineers.

Benefits

  • Health insurance coverage
  • Life insurance
  • Disability insurance
  • Savings plan
  • Company-paid holidays
  • Paid time off (PTO) for vacation and/or personal business
  • Potential eligibility for overtime, shift differential, and discretionary bonus
  • Annual bonuses designed to reward individual contributions and share company results
  • Potential eligibility for long-term incentives for Vice President or Director positions
  • Relocation assistance may be available
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