Our vision is to transform how the world uses information to enrich life for all. Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate, and advance faster than ever. Within the HBM organization, this role is part of a highly collaborative team focused on advancing next-generation High Bandwidth Memory (HBM) solutions through deep characterization, modeling, and root-cause analysis. The team partners closely with Design Technology Co-Optimization (DTPCO), Product Engineering, Packaging, Test, Reliability, and Technology Development organizations to drive product innovation and quality. This role is critical to achieving DTPCO objectives by developing a first-principles understanding of HBM cube limitations and validating hypotheses through silicon data and supporting models. The position focuses on custom bench-level characterization of HBM devices under thermal, mechanical, and electrical stress conditions to improve product performance, yield, reliability, and adaptability across future HBM generations.
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Job Type
Full-time
Career Level
Intern