This role focuses on the design and development of package and interconnect methods for Renesas’s AI/Datacenter Infrastructure Power packaging needs, specifically for Smart Power Stages, Vertical Power Stages, Power Modules & Discrete FET packages. The scope includes Wide Bandgap (WBG) development, such as SiC & GaN, along with DBC, AMB substrates, and advanced interconnect technologies. Knowledge of wafer level, flip-chip, multi-chip module, and power devices is considered a plus. The position involves managing package technology development, R&D, global OSAT management for new package development and product qualification, defining the technology roadmap, managing the R&D budget, and leading customer adoption programs.
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Job Type
Full-time
Career Level
Director
Education Level
Ph.D. or professional degree