Staff SiC Device & Process Engineer

Vishay Intertechnology, Inc.•San Jose, CA
•$160,000 - $225,000•Onsite

About The Position

Vishay is seeking a Staff SiC Device and Process Engineer to join their team in California. This role will focus on enabling innovative wide bandgap semiconductor technology to realize the next generations of Vishay-Max SiC proprietary power device product portfolio. Vishay manufactures a vast portfolio of discrete semiconductors and passive electronic components crucial for various markets including automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical. As a Fortune 1,000 company listed on the NYSE (VSH), Vishay plays a key role in bringing in-demand technologies to life.

Requirements

  • A comprehensive, demonstrable background in power semiconductor materials / semiconductor device physics, and / fabrication process with hand-on direct experiences.
  • Approach tasks in a logic-based way, along with having the ability and motivation to develop novel and creative ideas.
  • Communication skills enabling seamless collaboration both with manufacturing partners and internal fab.
  • Ability to build and maintain lasting relationships in international and cross-functional project teams.
  • Minimum 5 years direct and hand-on experience in the field of power semiconductor technology development.
  • Direct experience in leading development projects throughout the fabrication process integration, device simulation and characterization, with the ability to apply project management best practice methodology.
  • Rich experiences in TCAD simulation for power semiconductor devices, especially WBG semiconductor, are required.
  • Knowledge of software tools for characteristic analysis of process, i.e. MATLAB, MathCAD.

Nice To Haves

  • Knowledge in semiconductor material for application in power semiconductor devices is desirable.

Responsibilities

  • Develop (including Design and Simulation) of the advanced SiC Power JFET and its fabrication process.
  • Develop (including Design and Simulation) of the advanced high voltage SiC Power MOSFET and its fabrication process.
  • Develop the PCM/TEG structures for monitoring and evaluation of the device design and fabrication process.
  • Perform electrical characterisation on SiC power semiconductor devices and the related PCM/TEG structures at the wafer-level.
  • Define and develop specifications of unit processes and coordinate their development with fab process team.
  • Devise process experiments for manufacturing process window optimization and improving the production yield.
  • Device Reliability qualification verification and reliability improvement.

Benefits

  • Health care coverage
  • Financial support programs
  • Other resources designed to help you achieve your personal and professional goals
  • Unique career paths
  • Open and collaborative culture
  • Stable business
  • Opportunities to work globally and locally
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