Staff SiC Device & Process Engineer

Vishay•San Jose, CA

3d•Onsite

About The Position

Vishay is seeking a Staff SiC Device and Process Engineer to join our team in California. This role is crucial for enabling innovative wide bandgap semiconductor technology to realize the next generations of Vishay-Max SiC proprietary power device product portfolio. You will be responsible for developing advanced SiC Power JFET and MOSFET devices and their fabrication processes, including design and simulation. You will also develop PCM/TEG structures for monitoring and evaluation, perform electrical characterization, define unit process specifications, optimize manufacturing processes, and verify device reliability.

Requirements

A comprehensive, demonstrable background in power semiconductor materials / semiconductor device physics, and / fabrication process with hand-on direct experiences.
Approach tasks in a logic-based way.
Ability and motivation to develop novel and creative ideas.
Communication skills enabling seamless collaboration both with manufacturing partners and internal fab.
Ability to build and maintain lasting relationships in international and cross-functional project teams.
Minimum 5 years direct and hand-on experience in the field of power semiconductor technology development.
Direct experience in leading development projects throughout the fabrication process integration, device simulation and characterization, with the ability to apply project management best practice methodology.
Rich experiences in TCAD simulation for power semiconductor devices, especially WBG semiconductor, are required.
Knowledge of software tools for characteristic analysis of process, i.e. MATLAB, MathCAD.

Nice To Haves

Knowledge in semiconductor material for application in power semiconductor devices is desirable.

Responsibilities

Develop (including Design and Simulation) of the advanced SiC Power JFET and its fabrication process.
Develop (including Design and Simulation) of the advanced high voltage SiC Power MOSFET and its fabrication process.
Develop the PCM/TEG structures for monitoring and evaluation of the device design and fabrication process.
Perform electrical characterisation on SiC power semiconductor devices and the related PCM/TEG structures at the wafer-level.
Define and develop specifications of unit processes and coordinate their development with fab process team.
Devise process experiments for manufacturing process window optimization and improving the production yield.
Device Reliability qualification verification and reliability improvement.