Sr Application Engineer, EDA

Qorvo•Richardson, TX

4d•$100,700 - $131,000•Hybrid

About The Position

Qorvo is seeking a Senior EDA Applications Engineer with hands-on GaN and/or GaAs RF Power Amplifier (PA) design experience to define, deploy, and support next generation 5G NR and 6G PA and RF Front-End Module (FEM) development. This is a hybrid role: part senior PA designer, part EDA methodology owner. You will bring practical, hands-on PA design expertise to the EDA flows (ADS, HFSS, Cadence, Synopsys, and related tools) that RF, analog, mixed-signal, and digital design teams depend on - ensuring those flows are grounded in real design and correlation challenges, from initial architecture definition through high-volume manufacturing.

Requirements

Bachelors Degree in Electrical Engineering with 5+ years of industry experience in hands-on GaN and/or GaAs RF Power Amplifier design, or an advanced degree with equivalent experience.
Proven track record designing PAs/FEMs using GaN and/or GaAs (HBT, HEMT, or related) technologies for cellular, 5G NR, 6G, or other high-frequency applications.
Strong understanding of RF fundamentals, including S-parameters, impedance matching, stability, and linearity.
Extensive hands-on experience with ADS, HFSS, and Cadence for RF circuit and EM design.
Solid background in RF measurement and characterization, with the ability to correlate simulated models to measured silicon performance.
Demonstrated ability to translate hands-on design experience into scalable methodology, flows, and best practices for a broader design organization.
Excellent technical communication and presentation skills; ability to work independently in a fast-paced environment.

Nice To Haves

Experience defining or deploying enterprise-wide EDA design flows and methodology across multiple design teams.
Knowledge of EM, package, thermal, and multi-physics simulation for RF front-end modules.
Direct experience collaborating with EDA vendors on tool qualification and roadmap development.
Experience carrying a PA or FEM design through the transition to high-volume manufacturing.
Working knowledge of Synopsys HSPICE/PrimeSim/VCS or Xcelium.

Responsibilities

Directly support the design of high-efficiency, high-linearity GaN and/or GaAs PAs and RF FEMs for 5G NR/6G, applying hands-on expertise to validate and continuously improve EDA methodology.
Lead or support the integration of PA dies into multi-chip modules (MCM), optimizing methodology and flows for size, cost, and thermal performance.
Provide day-to-day applications support for PA, RFIC, analog, mixed-signal, and digital design teams using industry-standard EDA tools (Cadence Virtuoso/Spectre, Keysight ADS, Ansys HFSS, Synopsys HSPICE/PrimeSim/VCS, Xcelium, AWR, or equivalent).
Develop, qualify, and deploy RF/PA design flows spanning circuit-level simulation (ADS) and 3D electromagnetic simulation (HFSS), ensuring consistency between models and measured silicon performance for GaN/GaAs technologies.
Evaluate, benchmark, and deploy new EDA capabilities for custom RF/analog design, AMS simulation, and digital verification, prioritized against real PA design and correlation challenges.
Partner with EDA vendors to resolve technical issues, influence tool roadmaps, and pilot new capabilities relevant to GaN/GaAs RF design.
Build reference design flows, PDK enablement, reusable automation, and documented best practices spanning RF, analog, AMS, and digital methodologies.
Deliver hands-on training, documentation, and mentoring to raise designer proficiency; document and present methodology and design results to internal and external stakeholders.