Sr Level Semiconductor Tech High Voltage Analog Device Engineer

Diodes•South Portland, ME

7d•Onsite

About The Position

The Senior Level Semiconductor High Voltage LNDMOS (Laterally Diffused N-type Metal-Oxide-Semiconductor) Device Engineer at Diodes, Inc. plays a pivotal role in the design, development, and optimization of high voltage power semiconductor devices. This person is responsible for advancing LNDMOS technology to enable reliable, efficient, and high-performance solutions for applications ranging from automotive, industrial, and consumer electronics to renewable energy systems. Focus will be on developing device and process technologies addressing voltages of 7 – 100 V with either junction or deep trench isolation. Bridging the gap between theoretical device physics and practical manufacturing, the LNDMOS Device Engineer ensures the delivery of robust products that meet stringent industry standards. The device engineer will be part of the Diodes, Inc. worldwide technology development organization and will work with a team of industry experts designing and developing analog semiconductor process technologies for Diodes products for both internal and external production. Work location will be the Diodes, Inc. fabrication site in South Portland, Maine (USA).

Requirements

Master’s or Doctoral degree in Electrical Engineering, Physics, Materials Science, or a related field with a focus on semiconductor devices or microelectronics.
5-10 years of direct experience in power semiconductor device engineering, with a strong emphasis on high voltage LNDMOS or LDMOS design and fabrication.
Must have worked directly designing devices with operating voltages above 30V and possibly as high as 120V.
Must understand state of the art device isolation methods such as deep trench and guard rings.
Proficiency in device and process simulation tools (e.g., Synopsys Sentaurus, Silvaco Atlas).
Strong understanding of semiconductor physics, high voltage breakdown mechanisms, device isolation, and reliability phenomena.
Hands-on experience with wafer fabrication, cleanroom protocols, and device characterization equipment.
Knowledge of industry standards for device reliability and ruggedness.
Experience with statistical analysis and data-driven problem solving.
Strong analytical thinking and attention to detail.
Excellent verbal and written communication skills for technical presentations and documentation.
Ability to work independently and as part of cross-functional teams.
Creative problem-solver with a passion for innovation.
Results-driven mindset with a commitment to quality and continuous improvement.

Nice To Haves

Experience with other power devices (IGBT, SiC/GaN MOSFETs) is a plus.
Publications or patents power devices or LNDMOS technology.
Proven track record of leading device development projects from concept to mass production.
Familiarity with automotive, industrial, or renewable energy power electronics applications.
Experience engaging with customers and stakeholders to translate application needs into device requirements.

Responsibilities

Lead and execute the design of high voltage LNDMOS devices, considering breakdown voltage, on-resistance, charge balance, and ruggedness.
Utilize CAD and TCAD simulation tools to model electrical, thermal, and reliability characteristics, iterating designs to achieve optimal performance. Device voltages will be over 7 volts and as high as 120 volts, and devices will be isolated either by junctions or deep trenches.
Collaborate closely with process engineers to define and refine process flows for LNDMOS device fabrication.
Evaluate and select suitable materials, doping profiles, and process steps to achieve desired device specifications, manufacturability, and yield.
Plan and conduct electrical, thermal, and reliability characterization of fabricated devices. Understanding how to characterize device isolation, whether by junctions or deep trenches, is especially important.
Analyze test data to validate models, extract key device parameters, and identify areas for improvement.
Research and implement new architectures, materials, and device structures (e.g., trench, RESURF, shielded gate) to push the boundaries of LNDMOS performance.
Stay abreast of academic and industry advances, proposing innovative solutions for future products.
Interface with teams across device design, process engineering, test and characterization, packaging, and product engineering to ensure seamless development and launch of LNDMOS-based products.
Produce detailed technical documentation, including design specifications, simulation reports, process flows, and characterization results.
Present findings to both technical and non-technical stakeholders.
Provide guidance and expertise to application engineers, field teams, and customers for integrating LNDMOS devices into end applications, troubleshooting, and ensuring optimal performance.