Navitas Semiconductor (Nasdaq: NVTS) is a next-generation power semiconductor leader driving innovation in gallium nitride (GaN) and high-voltage silicon carbide (SiC) technologies. Our products enable faster, more efficient power delivery across AI data centers, high-performance computing, energy and grid infrastructure, and industrial electrification. With more than 30 years of combined expertise in wide bandgap technologies, GaNFast™ power ICs integrate GaN power, drive, control, sensing, and protection, delivering faster power delivery, higher system density, and greater efficiency. GeneSiC™ high-voltage SiC devices leverage patented trench-assisted planar technology to provide industry-leading voltage capability, efficiency, and reliability for medium-voltage grid and infrastructure applications. We are seeking a high-performing graduate-level intern to join our Program Management team supporting the development of high-power SiC-based modules for AI infrastructure and electrification applications. The intern will take an active role in our New Product Introduction (NPI) process — coordinating cross-functional teams, tracking program milestones, and engaging directly with semiconductor suppliers to drive development projects to launch on time and within specification.
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Career Level
Intern