Principal/ Sr. Principal SiC Technologist - U.S. Government Programs

NAVITAS SEMICONDUCTOR USA, INC.•Torrance, CA

1d•$150,000 - $210,000•Onsite

About The Position

Navitas Semiconductor (Nasdaq: NVTS) is a next-generation power semiconductor leader driving innovation in gallium nitride (GaN) and high-voltage silicon carbide (SiC) technologies. Our products enable faster, more efficient power delivery across AI data centers, high-performance computing, energy and grid infrastructure, and industrial electrification. With more than 30 years of combined expertise in wide bandgap technologies, GaNFast™ power ICs integrate GaN power, drive, control, sensing, and protection, delivering faster power delivery, higher system density, and greater efficiency. GeneSiC™ high-voltage SiC devices leverage patented trench-assisted planar technology to provide industry-leading voltage capability, efficiency, and reliability for medium-voltage grid and infrastructure applications. We are seeking a Principal/ Sr. Principal SiC Technologist to join our fast-growing, collaborative team. The ideal candidate is self-motivated, energetic, and able to thrive in a high-growth, innovative environment, contributing directly to technologies that are shaping the future of power electronics. The SiC Technologist will provide technical leadership for Navitas U.S. government-funded and strategic power semiconductor programs focused on silicon carbide power devices, including high-voltage and ultra-high-voltage SiC MOSFETs, IGBTs, JBS/MPS diodes, PiN diodes, thyristors, pulsed-power switches, DSRDs, modules, and related process, packaging, and reliability technologies. This role is intended to build on Navitas (GeneSiC) long history of government-agency programs and awards spanning DOE energy-storage and grid applications, U.S. DoW high-power pulsed systems, high-voltage devices, and SBIR/STTR technology transition. The position will bridge advanced device technology, government program execution, customer engagement, compliance-driven delivery, and transition of funded R&D into manufacturable, high-reliability products for defense, aerospace, energy infrastructure, pulsed-power, industrial electrification, and critical infrastructure applications.

Requirements

Basic Ph.D. in Electrical Engineering, Materials Science, Applied Physics, Semiconductor Device Engineering, Power Electronics, or a related technical field.
10+ years of experience in semiconductor device technology, with substantial experience in SiC power devices, wide-bandgap semiconductors, or high-voltage power electronics.
Strong understanding of SiC device physics, MOS interface behavior, edge termination, avalanche ruggedness, short-circuit behavior, switching performance, radiation effects, and reliability mechanisms.
Experience with high-voltage and ultra-high-voltage device characterization, pulsed-power testing, wafer-level probing up to 10 kV and beyond, reliability testing, ruggedness testing, failure analysis, and data-driven design-of-experiments.
Ability to connect device-level technology choices to system-level needs in defense, aerospace, grid, pulsed-power, energy-storage, industrial electrification, and critical infrastructure applications.
Ability to lead technical teams without direct authority and communicate effectively with engineering, operations, quality, business development, contracts, compliance, program management, and executive stakeholders.
Experience preparing technical reports, milestone documentation, test evidence, proposal content, and customer briefings for complex R&D, SBIR/STTR, or product-development programs.
U.S. person status (green card holder or US citizen) and ability to meet customer and export-control, ITAR requirements for U.S. government program work, where applicable.

Nice To Haves

Prior experience leading or supporting U.S. government-funded semiconductor, power electronics, defense, aerospace, Navy, DOE, NASA, DARPA, DMEA, ARPA-E, national lab, or critical-infrastructure programs.
Direct experience with SBIR/STTR programs, including Phase I feasibility, Phase II development, commercialization planning, technical volume writing, milestone tracking, and transition to larger government or commercial programs.
Working knowledge of CHIPS Act, Department of Defense, Department of Energy, NASA, DARPA, ARPA-E, DMEA, national lab, or other federally funded technology programs.
Familiarity with ITAR, EAR, CUI, NIST 800-171/CMMC expectations, data-rights considerations, subcontractor flow-downs, and secure handling of sensitive technical information.
Experience advancing technologies through readiness levels, prototype builds, foundry transfer, 150 mm or larger wafer manufacturing scale-up, qualification planning, reliability demonstration, and transition to production.
Hands-on experience with SiC MOSFET/IGBT cell design, termination design, JBS/Schottky diode design, PiN diodes, thyristors, pulsed-power switching, oxide reliability, body diode degradation, gate reliability, or radiation/hard-environment considerations.
Experience collaborating with external partners, including universities, national labs, defense primes, aerospace organizations, foundries, packaging houses, test labs, and government customers.

Responsibilities

Serve as a technical lead for Navitas/GeneSiC SiC power device programs funded by U.S. government agencies, including SBIR/STTR, DOE, DoD, Navy, NASA, national lab, and strategic public-private initiatives.
Translate prior GeneSiC/Navitas government-program learnings into new program strategy across ultra-high-voltage MOSFETs, IGBTs, JBS/Schottky and PiN diodes, thyristors, pulsed-power switches, DSRDs, and SiC modules.
Define and guide device technology roadmaps for 650 V to 6.5 kV-class SiC MOSFETs, diodes, and power modules aligned with program objectives, manufacturability, ruggedness, reliability, qualification, and application requirements.
Lead device design reviews, TCAD/modeling assessments, process integration discussions, characterization plans, pulsed-power test strategies, harsh-environment validation, and failure-analysis activities.
Translate government program goals into technical work packages, milestones, deliverables, risk registers, verification plans, technical data packages, and transition-to-manufacturing plans.
Coordinate cross-functional execution across device engineering, process development, epitaxy, wafer fabrication, foundry partners, test, packaging, reliability, product engineering, quality, supply chain, and program management.
Support proposal development, technical volumes, statements of work, costed work plans, milestone definitions, commercialization plans, data-rights inputs, and customer briefings for government opportunities.
Prepare and present technical updates, design reviews, milestone reports, test evidence, and executive-level summaries for internal leadership, government customers, national labs, prime contractors, and strategic partners.
Ensure program execution follows applicable export-control, controlled unclassified information, cybersecurity, documentation, government-property, deliverable, and customer-specific handling requirements.
Identify technology gaps, recommend experiments, and drive data-based decisions to improve device performance, ruggedness, yield, reliability, qualification readiness, and transition from funded R&D to product platforms.
Partner with program management to maintain traceability between contract requirements, solicitation objectives, technical milestones, deliverables, risk mitigations, commercialization commitments, and customer reporting.
Support technical compliance reviews for proposal submissions, statements of work, subcontractor activities, data rights, government-furnished information, deliverable formats, test reports, and documentation packages.
Provide clear technical rationale for milestone achievement, including test evidence, design data, TCAD/modeling results, characterization results, reliability data, ruggedness data, and manufacturing-readiness indicators.
Shape government proposals around GeneSiC/Navitas differentiators, including rugged SiC device design, high-voltage and ultra-high-voltage portfolios, harsh-environment capability, reliability-centered qualification, and transition from government-funded R&D to product platforms.
Contribute to workforce development, domestic supply-chain strengthening, foundry strategy, technology-transition narratives, and manufacturing-readiness plans where required by government funding programs.
Represent the company in technical exchanges, design reviews, program reviews, workshops, site visits, and partner meetings with government agencies, prime contractors, national labs, universities, and strategic partners.