Principal R&D Laser EPI Design Engineer
About The Position
The Principal R&D Laser EPI Design Engineer coordinates epitaxial design and growth activities for laser devices, working with device designers to develop growth recipes that satisfy performance requirements such as output power, drive voltage, beam characteristics, wavelength, high-speed operation, and reliability. EPI design includes modeling inputs such as layer thicknesses and compositions, doping profiles, active regions, and growth conditions against outputs such as mode profiles, beam divergence, and electrical resistance. Designs must align with wafer processing and device design technology while supporting high yield. The role translates designs into EPI growth recipes and works with internal growers or manages external vendors to execute growths. For each growth campaign, the engineer reviews calibration and EPI characterization data, provides feedback to growers, and modifies designs as needed. The engineer also works with device design and wafer process integration teams to launch process runs, supports NPI analysis of wafer processing, device testing, and reliability data, coordinates special EPI analyses, and generates intellectual property for novel device or EPI design ideas.
Requirements
- PhD degree in optoelectronics or another relevant major, with industry experience.
- Hands-on experience with MBE or MOCVD growth of III/V semiconductor material.
- Experience with semiconductor wafer analysis, including photoluminescence (PL), reflectance spectrum, EPI defects and haze scans, X-ray diffraction (XRD), SIMS, and ECV profiling.
- Knowledge of semiconductor device physics, laser diode testing, and wafer process technology.
- Experience with software data analysis tools such as Excel, JMP, or Minitab, and data processing tools such as Python or Matlab.
- Ability to work effectively in cross-functional teams as both a team leader and a contributor.
- Strong verbal and written communication skills.
Nice To Haves
- Experience with GaAs-based VCSEL devices.
- Experience with VCSEL devices.
- Experience with device modeling and device simulation.
Responsibilities
- Coordinate with device designers to develop epitaxial growth recipes that meet device performance requirements.
- Model EPI design inputs, including layer thicknesses and compositions, doping profiles, active regions, and growth conditions, against device outputs such as mode profiles, beam divergence, and electrical resistance.
- Ensure EPI designs align with wafer processing and device design technology and support high yield.
- Translate designs into EPI growth recipes and work with internal EPI growers or manage external vendors to execute growths.
- Review calibration and EPI characterization data for each growth campaign; provide feedback to growers or modify EPI designs as needed.
- Work with device designers and wafer process integration teams to launch process runs.
- Support the NPI team in analyzing wafer processing, device testing, and reliability data and use the findings to improve EPI designs.
- Coordinate special EPI-related analyses, including SIMS, TEM, and EDX, to understand performance and reliability.
- Generate intellectual property for novel device-design or EPI-design ideas.
Benefits
- Flexible time off.
- Health and wellness benefits, including physical and mental wellness.
- Tuition reimbursement and career growth support.
- Free gym, games room, and prayer room.
- Subsidized meals and free coffee/tea.
- Employee stock options and incentive plans.
- Competitive total compensation packages, which may include annual bonus, equity, and health and welfare benefits.
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What This Job Offers
Job Type
Full-time
Career Level
Principal
Education Level
Ph.D. or professional degree
