About The Position

Our vision is to transform how the world uses information to enrich life for all. Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. We are part of a pathfinding organization focused on developing the technologies that will enable the next generation of memory solutions. Our team brings together engineers, scientists, and innovators working at the forefront of semiconductor research and development to solve sophisticated scaling, performance, and power challenges for future memory products. In this role, you will help develop the future of advanced memory technology by driving the development of first in industry Advanced DRAM solutions! You will collaborate across process integration, device engineering, materials science, characterization, and reliability teams to transform innovative concepts into silicon and deliver breakthrough memory architectures.

Requirements

  • MS or PhD in Physics, Materials Science & Engineering, Electrical Engineering, or a related technical field
  • 7 to 10 years of semiconductor proven experience in memory technology, process integration, or device development
  • Strong knowledge of memory technologies such as DRAM, NAND, and emerging memory architectures
  • Deep understanding of semiconductor process integration, process development, device physics, and materials science
  • Experience leading cross-functional technical projects and applying meticulous experimental design and data analysis methodologies

Nice To Haves

  • Experience developing advanced-node memory technologies, including Advanced DRAM architectures
  • Knowledge of memory-related circuit and architecture considerations impacting device design and performance
  • Experience evaluating reliability, variability, noise mechanisms, and device failure analysis
  • Demonstrated success implementing innovative solutions for memory scaling, performance, or power optimization
  • Experience using AI-assisted analytics to enhance data interpretation, anomaly detection, and yield improvement initiatives

Responsibilities

  • Lead process integration efforts for Advanced DRAM technologies, including charge storage devices, thin-film transistors (TFTs), and related device components
  • Develop and integrate new memory device architectures from concept through silicon implementation and productization
  • Design and implement experiments to evaluate device performance, variability, reliability, and failure mechanisms
  • Partner with cross-functional teams to optimize process flows and deliver solutions that meet product requirements
  • Drive yield improvement initiatives through analysis of inline, defect, parametric, and probe data

Benefits

  • Choice of medical, dental and vision plans
  • Benefit programs that help protect your income if you are unable to work due to illness or injury
  • Paid family leave
  • Robust paid time-off program
  • Paid holidays
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