Intern - DRAM PI

Micron Technology • Boise, ID

12h • Onsite

About The Position

Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Micron is a global leader in DRAM technology, driving innovation that enables the next generation of computing, artificial intelligence, and data-driven applications. The DRAM Technology Development organization focuses on advancing semiconductor manufacturing capabilities through collaborative research, process innovation, and technology scaling. Team members work across multiple engineering fields to develop breakthrough memory solutions that shape the future of the industry. As a Process Integration Engineer, you will contribute to the development of next-generation DRAM technologies by collaborating with process, materials, device, and design engineering teams. This role is responsible for coordinating module-related development activities, defining technical requirements, resolving complex integration challenges, and supporting the successful execution of technology development programs. The ideal candidate will possess strong semiconductor process integration knowledge and a passion for advancing future memory architectures within a fast-paced R&D environment.

Requirements

• Currently pursuing a Master of Science degree in Electrical Engineering, Microelectronics, or a related field, with an anticipated graduation date after September 2027.
• Demonstrated knowledge of DRAM process integration, device physics, semiconductor scaling, and advanced memory technologies.
• Experience with Design of Experiments (DOE), statistical analysis, and interpretation of complex engineering data.
• Proven ability to analyze and resolve technical challenges in a multi-functional R&D environment.
• Experience Using AI tools to support technical problem-solving, data analysis, research, or engineering workflows.

Nice To Haves

• Currently pursuing or planning to pursue a PhD in Electrical Engineering, Microelectronics, or a related technical field.
• Experience providing technical leadership, project coordination, or mentoring within research or development environments.
• Familiarity with advanced DRAM architectures, process integration challenges, and emerging memory technology trends.
• Strong problem-solving, communication, and adaptability skills with a demonstrated record of innovation.
• Experience Leveraging AI or Generative AI technologies to enhance engineering analysis, technical documentation, or development efficiency.

Responsibilities

• Define technology landmarks, design rules, structural and electrical specifications, and integration requirements for next-generation DRAM products.
• Collaborate with multi-functional teams including simulation, process development, process architecture, circuit design, and quality engineering to achieve technical objectives and project timelines.
• Lead module-related integration activities, identify technical risks, develop test plans, and communicate progress, issues, and recommendations to collaborators.
• Investigate and evaluate alternative architectures, process enablers, and scaling solutions to support future DRAM technology roadmaps.
• Utilize AI Assisted tools and data-driven methodologies to improve engineering productivity, analysis, and decision-making throughout the development process.

Benefits

• Choice of medical, dental and vision plans
• Benefit programs that help protect your income if you are unable to work due to illness or injury
• Paid family leave
• Robust paid time-off program
• Paid holidays

What This Job Offers

• Job Type: Full-time
• Career Level: Intern