Postdoctoral Researcher – Molecular Beam Epitaxy of Ultra-Wide Bandgap Oxide and Nitride Materials

National Laboratory of the Rockies • Golden, CO

7d • $76,600 - $126,400 • Onsite

About The Position

A Postdoctoral Researcher position is available in the Materials Science Center, in the area of thin film synthesis of nitride and oxide materials using Plasma-Assisted Molecular Beam Epitaxy. The position would involve synthesis and characterization of oxide and nitride materials for electronic applications using molecular beam epitaxy system with radio-frequency plasma sources. Particular emphasis will be placed on the growth, doping, and characterization of electronic-grade ultra-wide bandgap semiconductors.
The position would support both basic research projects and applied development projects on ultra-wide bandgap oxide materials including both gallium oxide, group III nitrides, and other emerging oxides and nitrides. Possible device applications include radio-frequency transistors, power diodes, radiation detectors, sensors for extreme environments, and other semiconductor devices. The job duties will also include stewardship of recently acquired deposition and characterization equipment, maintaining existing experimental facilities, as well as development and modification of data analysis software.
The postdoc appointment is for up to 3 years total, reviewed and extended annually based on program needs, funding availability and performance.

Requirements

• Must be a recent PhD graduate within the last three years.
• Must meet educational requirements prior to employment start date.
• Solid experience operating a plasma-assisted molecular beam epitaxy tool.
• Hands-on ability to maintain complex vacuum deposition equipment.
• Prior background in oxides or nitride materials research, or other relevant materials systems.
• Some experience with semiconductor materials or electronic devices.
• Established track record in scientific writing, presentation, publishing, and communication.

Nice To Haves

• Prior direct experience with cleanroom-based semiconductor device fabrication, with emphasis placed on ultra-wide bandgap materials and their associated devices.
• Prior direct experience with material development for one of the device application areas above.
• Prior experience (e.g., intern) in an industrial or laboratory R&D setting, design of experiments.
• In-depth knowledge on one or several materials characterization methods, such as diffraction, spectroscopy, microscopy, material property measurements.
• Active computer skills in programming (e.g. LabView, C/Igor Pro, Python, Matlab, etc.), statistical data analysis, and/or software development.
• Mentorship experience with undergraduate or graduate students.
• Strong motivation, ability to work on collaborative projects, ability to balance different types of tasks.

Responsibilities

• Synthesis and characterization of oxide and nitride materials for electronic applications using molecular beam epitaxy system with radio-frequency plasma sources.
• Growth, doping, and characterization of electronic-grade ultra-wide bandgap semiconductors.
• Support basic research projects and applied development projects on ultra-wide bandgap oxide materials including gallium oxide, group III nitrides, and other emerging oxides and nitrides.
• Stewardship of recently acquired deposition and characterization equipment.
• Maintaining existing experimental facilities.
• Development and modification of data analysis software.

Benefits

• medical, dental, and vision insurance
• short-term disability insurance
• pension benefits
• 403(b) Employee Savings Plan with employer match
• life and accidental death and dismemberment (AD&D) insurance
• personal time off (PTO) and sick leave
• paid holidays
• performance-, merit-, and achievement- based awards that include a monetary component
• relocation expense reimbursement

What This Job Offers

• Job Type: Full-time
• Career Level: Entry Level
• Education Level: Ph.D. or professional degree