Principal/Senior Principal Engineer Microelectronic Semiconductors

Northrop Grumman•Manhattan Beach, CA

8d•$114,000 - $213,400•Onsite

About The Position

At Northrop Grumman, we are seeking a Microelectronics Device Engineer to join our team at the Space Park Foundry (SPF) location in Redondo Beach, CA. The Microelectronics Center (NGMC) designs, manufactures, and tests semiconductor products for various customers and programs. The SPF semiconductor foundry specializes in Gallium Arsenide, Indium Phosphide, and Gallium Nitride technologies, driving leading-edge development in semiconductor materials, processes, devices, and 3D heterogeneous integration (3DHI). These capabilities are crucial for many of Northrop Grumman's ground, avionic, and space systems. The selected candidate will support the research and development of advanced microelectronics products, focusing on leading the development and maturation of novel III-V semiconductor technologies, particularly advanced GaN HEMT technology nodes. This role involves advancing new technologies from early research and development through production, requiring the ability to thrive in fast-paced, multidisciplinary teams. Responsibilities include mmW transistor design and simulation, experimental device development, root cause analysis, and RF device characterization. The candidate must be comfortable in a lab environment and collaborate closely with process engineers, circuit designers, and test engineers, possessing demonstrable expertise in semiconductor device physics and development, with an emphasis on transistor devices. This requisition may be filled as a Principal Microelectronics Device Engineer or Senior Principal Microelectronics Device Engineer.

Requirements

Bachelor of Science in Electrical Engineering, Chemical Engineering, Materials Engineering, Chemistry, Physics or other related STEM discipline.
Principal Level: 5 years of relevant experience (3 years with a Master’s degree and 0 with a PhD).
Senior Principal Level: 8 years of relevant experience (6 years with a Master’s degree and 3 with a PhD).
Experience with semiconductor device processing, including High Electron Mobility Transistor (HEMTs) and Heterojunction Bipolar Transistor (HBTs).
Expertise in semiconductor device physics.
Proficiency in Design-of-Experiments methodologies.
Ability to obtain and maintain a DoD Secret clearance.
US Citizenship required.

Nice To Haves

Ph.D. degree in Electrical Engineering, Materials Engineering, or Physics.
Experience with MMIC design and fabrication.
Direct experience with GaN transistor development.
Demonstrated track record of applying scientific principles to advance device performance.
Experience with technology maturation and transition from R&D to manufacturing.
Excellent communication, interpersonal skills, and the ability to interface with all levels of employees and management.
Proven track record in leading multidisciplinary teams.
Ability to prioritize and manage tasks efficiently in a dynamic environment.
Demonstrated professional accomplishments and publication record related to semiconductor technology R&D and maturation.

Responsibilities

Leading the development and maturation of novel III-V semiconductor technologies including, but not limited to, advanced GaN HEMT technology nodes.
Advancing new technologies from early research and development through production.
mmW transistor design and simulation.
Experimental device development.
Root cause analysis.
RF device characterization.
Collaborating closely with process engineers, circuit designers, and test engineers.
Applying scientific principles to advance device performance.
Technology maturation and transition from R&D to manufacturing.
Leading multidisciplinary teams.
Prioritizing and managing tasks efficiently in a dynamic environment.