Principal /Senior Principal Microelectronic Semiconductor Engineer

Northrop Grumman•Manhattan Beach, CA

6d•$114,000 - $213,400•Onsite

About The Position

The Semiconductor Materials group of Northrop Grumman Mission Systems (NGMS) is seeking a Microelectronics Semiconductor Engineer in our molecular-beam epitaxy (MBE) lab for our Space Park Foundry (SPF) located in Manhattan Beach, Los Angeles. We design, manufacture, and test semiconductor products for internal and commercial production customers, as well as emerging technology programs. Northrop Grumman’s SPF semiconductor foundry is a unique capability supporting a range of production microelectronic devices (Gallium Arsenide, Gallium Nitride, and Indium Phosphide) and providing leading-edge technology development in electronics. Our devices enable a number of Northrop Grumman’s ground, sea, air, and space systems. Join us to work with a talented, experienced team while helping serve your country. Join our team to research, develop, and manufacture III-V compound semiconductors and advanced microelectronics materials. In this role, you’ll develop and optimize GaN-, InP-, and GaAs-based epitaxial materials using molecular beam epitaxy (MBE), evaluate next-generation materials for future device needs, and support production through disciplined tool operation, maintenance, and documentation. You’ll also collaborate closely with process engineering to improve quality, efficiency, and cost in a production environment.

Requirements

Bachelors degree in a STEM field (Science, Technology, Engineering, or Math) from an accredited institution with 5+ years of relevant experience, Master degree in a STEM field with 3+ years of relevant experience or PhD with 1 year relevant experience (for Principal level) OR Bachelors degree in a STEM field (Science, Technology, Engineering, or Math) from an accredited institution with 8+ years of relevant experience, Master degree in a STEM field with 6+ years of relevant experience or PhD with 4 years relevant experience (for Senior Principal level).
Ability to work in a lab environment and lift materials/equipment as needed.
Hands-on experience operating an MBE growth system.
Understanding of materials characterization/analysis techniques, including X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL), non-destructive electrical measurements, and Hall effect measurements.
Understanding semiconductor materials basic.
US Citizenship required
Ability to obtain and maintain Secret clearance required

Nice To Haves

PhD in a STEM field.
Hands-on experience maintaining an MBE growth system.
Strong semiconductor background
Experience working with internal/external customers and suppliers.
Experience with GaN/InP/GaAs epitaxy operation and metrology.

Responsibilities

Conduct research, development, and manufacturing of III-V compound semiconductors and advanced microelectronics materials.
Translate experimental work into repeatable, production-ready processes.
Develop and optimize GaN-, InP-, and GaAs-based materials using molecular-beam epitaxy (MBE).
Plan and execute growth runs, refine process conditions, and iterate based on results to meet material needs.
Research and evaluate next-generation materials to support future device requirements.
Document findings and experimental outcomes to inform next steps.
Support the operation and maintenance of MBE vacuum systems and semiconductor metrology equipment.
Perform routine checks and troubleshooting to sustain tool availability and consistent performance.
Partner with process engineers to drive manufacturing design improvements in product quality, efficiency, and cost.
Support cross-functional alignment to ensure changes are implemented effectively.
Create clear written documentation of procedures, tool setups, and experimental results, with strong attention to detail.
Provide material control support for the purchasing, acceptance, and tracking of semiconductor materials in a production environment.