Memory Circuit Design Engineer

Intel Corporation•Hillsboro, OR

1d•$122,440 - $232,190•Hybrid

About The Position

You will be partnering with and leveraging domain experts across various areas of technology development, EDA vendors and product design teams to develop and deliver high-quality industry-leading memory technology collaterals and to drive circuit innovations that enable next generation high-performance, high-density, low-power embedded memory designs on Intel advanced CMOS process technologies. The Advanced Design (AD) team is part of Intel’s larger Design Technology Platform (DTP) Organization and is focused on pathfinding and development of advanced memory technology. These circuits enable best-in-class memory collateral, IP and innovative product design across all generations of Intel process technology. At Intel, DTP is one of the key pillars enabling Intel to deliver winning products in the marketplace. Your work will directly enable Intel’s internal and external customers to get to the market faster with products that include high-performance, high-density, low-power memory at the leading edge of the technology curve and implemented in Intel’s advanced CMOS process technologies.

Requirements

Master’s degree in Electrical Engineering, Computer Engineering, Electrical & Computer Engineering, or a related discipline, including 4 years of professional experience gained through either internships or full-time employment
Ph.D. in one of the same fields listed above.
Design, characterization, and verification of custom memory circuits such as SRAM, Register Files or ROM
Design trade-offs between power, performance, and area (PPA)
Custom digital circuit design, simulation, layout design, and verification
Experience in EDA tools used for custom digital and memory circuit design.

Nice To Haves

Ph.D. with 1-2 years of professional experience gained through either internships or full-time employment.
Design technology co-optimization (DTCO)
Post-Si validation experience.
Knowledge of the CMOS ASIC design flow.

Responsibilities

Memory pathfinding activities and power, performance and area (PPA) optimization through design technology co-optimization (DTCO) and product design enablement.
Memory bit-cell and complex periphery IC layout and automation.
Memory array/IP design, memory circuit innovation, test-chip design.
Pre-Si verification, post-Si validation and debugging to enable yield and parametric tracking/ramp.