At Micron's Boise R&D site, the DRAM Technology Development organization drives innovation in next-generation memory solutions. The team develops advanced DRAM cell architectures, access devices, materials systems, and integration technologies that enable future scaling, improved performance, enhanced reliability, and manufacturing readiness. Engineers work across device, materials, process integration, modeling, design, and product engineering teams to bring groundbreaking memory technologies from concept to production. As an intern in the Advanced DRAM Device & Cell Technology team, you will contribute to the development and characterization of future DRAM cell and access device technologies through experimental studies, data analysis, and collaboration with multidisciplinary engineering teams. This position combines semiconductor device physics, materials engineering, silicon experimentation, electrical characterization, and data-driven decision making to improve cell performance, density, retention, reliability, and manufacturability. The successful candidate will collaborate with multi-functional teams to evaluate novel materials, device architectures, and integration schemes supporting future memory technology development.
Stand Out From the Crowd
Upload your resume and get instant feedback on how well it matches this job.
Job Type
Full-time
Career Level
Intern