GaN Characterization Intern
Power Integrations•San Jose, CA
•Onsite
About The Position
Internship Summary, Responsibilities, and Deliverables: Intern would be responsible for executing experiments including static/dynamic characterization of discrete or cascode GaN devices, TDDB-based lifetime study, and data analysis and interpretation. Deliverable would be a concise report including key comparison charts and tables that the team can use as part of customer communications.
Requirements
- MS/PhD student
- Field(s) of Study: Semiconductor device physics, GaN, Reliability, WBG applications
Nice To Haves
- Hands on experience with static and dynamic characterization of semiconductor power device
Responsibilities
- Executing experiments including static/dynamic characterization of discrete or cascode GaN devices
- TDDB-based lifetime study
- Data analysis and interpretation
- Deliver a concise report including key comparison charts and tables for customer communications.
Benefits
- The hourly pay range for this internship is $40 to $45.
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What This Job Offers
Career Level
Intern
