Electronics RF RDT&E Engineer

Leidos•Washington, DC

13d•Onsite

About The Position

The Center for Electromagnetics Sciences Branch in the Leidos Directed Energy Division has an opening for an Electronics RF RDT&E Engineer to provide RF electronics fabrication, measurement, and analysis support to advance microwave and millimeter wave electronics Research, Development, Test and Evaluation (RDT&E) within the Electromagnetic Technology Branch of the Electronics Science and Technology Division (ESTD), Code 6800, at the US Naval Research Laboratory.

Requirements

M.S. and 3+ years (or B.S. and 4+ years) in an associated field.
Must be a U.S Citizen.
The ability to obtain a security clearance may be required for this role in the future (no clearance required to start in this role)
The ability to lead research, work with a team, and interact directly with the customer is important.
Must have 3+ year of the following: A publication record in refereed journals in the field of study is important, as is attending conferences and presentation research publicly and to the customer.
Experience writing proposals for government programs is one of the roles of this offering.
Experienced in semiconductor device physics; Testing/probing on-chip, including S-parameter; RF instrumentation (spectrum analyzers, etc.); Device performance and failure analysis; Thin film dielectric dielectrics; Lithography, metrology, etc.; Cleanroom experience.

Nice To Haves

Familiarity with the work environment required to be done in the NRL Electronics Science and Technology Division (ESTD).
Software: MS Office; LT Spice; 3D Printing; MATLAB & Simulink; Arduino IDE; CAD Software
Programming: C/C++/C#; Python; MATLAB NKE

Responsibilities

Perform fabrication and assembly of RF electronic components and test structures to support experiments related to microwave and millimeter-wave device architectures ranging from active devices such as amplifiers to passive devices such as filters.
Utilize metrology tools to characterize the fabrication process for understanding process-performance relationship of the device technologies including material thicknesses, critical geometric dimensions, and surface morphologies.
Setup and perform experimental test and evaluation of a variety of RF electronics and test structures to include, but not limited to, current-voltage relationships; impedance-frequency-voltage spectroscopy; small-signal S-parameters; and large-signal RF characterization.
Perform all system calibrations to ensure accurate measurements, e.g., calibration of vector network analyzer for RF S-parameter characterization.
Provide analysis, including plotting, of measurement data as described above to extract critical device and test structure performance metrics such as dielectric constant, resistance, small-signal gain, insertion loss, bandwidth, power-added efficiency, output power, and 1 dB gain compression input power.
Create and provide briefings to project principal investigators on fabrication, test, and analysis findings, issues, and recommendations.
Develop plans for improvements in device design and fabrication processes based on analysis of experimental measurements and understanding of device design-process-performance relationship.
Provide input to update existing device models to improve accuracy.