DRAM Device & Cell Technology Engineer

Micron Technology • Boise, ID

1d • Onsite

About The Position

Our vision is to transform how the world uses information to enrich life for all. Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. As a DRAM Device & Cell Technology Engineer at Micron’s Boise R&D site, you will play a central role in defining, developing, and optimizing next generation DRAM architectures, cell technologies, and access device technologies. You will collaborate closely with device engineers, process integration teams, process teams, modeling groups, design teams, and product engineering partners to push the limits of density, performance, reliability, and manufacturability for future DRAM nodes. Our vision is to transform how the world uses information to enrich life for all. Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Our DRAM and Cell Technology department at Micron is dedicated to pushing the boundaries of memory technology. Our team works collaboratively and passionately to deliver outstanding solutions that drive the future of information technology. As a DRAM Device & Cell Technology Engineer, you will have the outstanding opportunity to define and optimize next-generation DRAM architectures and technologies. This role places you at the forefront of innovation, working with a team with varied strengths to achieve outstanding performance and reliability in our products.

Requirements

• M.S. or Ph.D. in Electrical Engineering, Materials Science, Applied Physics, or a related field.
• Strong understanding of semiconductor device physics, including MOSFETs, access devices, and capacitors.
• Experience in electrical measurement, device evaluation, and data interpretation.
• Familiarity with DRAM operation fundamentals, such as activation, sensing, and disturb mechanisms.
• Proficient in scripting and data analysis tools including Python, MATLAB, and JMP.

Nice To Haves

• Ability to clearly communicate experimental results and drive cross-team alignment.
• Hands-on experience with DRAM or NAND device development.
• Experience with TCAD simulation tools such as Synopsys Sentaurus or Silvaco.
• Experience in semiconductor device fabrication or advanced BEOL integration.
• Knowledge of reliability mechanisms and device variation analysis.

Responsibilities

• Develop DRAM cell and access device technologies to improve density, retention, and disturb immunity.
• Develop and perform silicon experiments, conducting detailed electrical characterization and data analysis.
• Analyze array-level behaviors and collaborate with circuit teams to optimize operation sequences.
• Integrate with multi-functional teams to ensure the scalability and robustness of developed solutions.
• Contribute to the technology roadmap, benchmarking internal capabilities against industry standards and proposing strategic adjustments.

Benefits

• choice of medical, dental and vision plans
• benefit programs that help protect your income if you are unable to work due to illness or injury
• paid family leave
• robust paid time-off program
• paid holidays

What This Job Offers

• Job Type: Full-time
• Career Level: Senior