Device Reliability Engineering Intern
About The Position
Join Texas Instruments’ Advanced Technology Development organization, which focuses on state-of-the-art semiconductor technology development. The intern will be a highly motivated PhD student working under the supervision of an experienced technology development team. The role involves modeling CMOS transistor degradation mechanisms, characterizing and modeling semiconductor device reliability, and developing tools and workflows for reliability and safe operating area analysis. The intern will work with process integration and PDK teams on BJT device development and model integration into the design environment, and will use AI/ML tools to analyze data, fit models, and automate model-development workflows.
Requirements
- Currently pursuing a PhD in Electrical Engineering or a related degree.
- Minimum cumulative GPA of 3.0/4.0.
- Strong analytical and programming skills, including C or MATLAB.
- Strong verbal and written communication skills.
- Ability to take initiative and drive for results.
- Strong time-management skills to enable on-time project delivery.
Nice To Haves
- Knowledge of semiconductor device characterization and modeling approaches.
- Familiarity with Keysight/Keithley programming, MATLAB, and SPICE simulations.
- Knowledge of semiconductor device physics, reliability failure mechanisms, and electrothermal device modeling.
Responsibilities
- Characterize and model the reliability of MOS and BJT semiconductor devices across advanced TI digital and analog technology nodes.
- Use Keysight/Keithley parametric analyzers for precision DC measurements.
- Work with process integration and PDK teams to develop BJT devices and integrate models into the design environment.
- Leverage AI/ML tools for data analysis and model fitting, and generate automated workflows for model development.
- Develop reliability and safe operating area tools.
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What This Job Offers
Job Type
Full-time
Career Level
Intern
Education Level
Ph.D. or professional degree
