Staff Engineer, SRAM Circuit Design

Samsung lv•San Jose, CA

1d•Onsite

About The Position

Our technology solutions power the tools you use every day--including smartphones, electric vehicles, hyperscale data centers, IoT devices, and so much more. Here, you’ll have an opportunity to be part of a global leader whose innovative designs are pushing the boundaries of what’s possible and powering the future. We believe innovation and growth are driven by an inclusive culture and a diverse workforce. We’re dedicated to empowering people to be their true selves. Together, we’re building a better tomorrow for our employees, customers, partners, and communities. We are looking for a passionate and experienced Staff Engineer, SRAM Circuit Design to lead the development of next-generation SRAM solutions. In this position, you will drive end-to-end design of high-performance, low-power memory circuits used in cutting-edge semiconductor products. Your work will directly influence the power, performance, and area (PPA) efficiency of future computing, mobile, and AI platforms. This role combines deep technical expertise with strategic team leadership, offering the opportunity to innovate at the forefront of semiconductor design.

Requirements

Bachelor's degree in electrical engineering with 10+ years of industry experience or master's degree in electrical engineering with 8+ years of experience strongly preferred.
Prior experience in SRAM or memory circuit design, with a proven track record of delivering SRAM designs in advanced process nodes.
Strong understanding of semiconductor devices physics and process technology (FinFET, GAA, SOI, etc.).
Expertise in SRAM architecture, including bitcells, sense amplifiers, write drivers, and read/write control paths.
Familiarity with timing analysis, power analysis, and design for manufacturability (DFM).
Proficiency in circuit simulation, variation analysis, and design tools such as Spectre, HSPICE, Cadence Virtuoso, etc.
Knowledge of scripting languages (e.g., Python, Perl, TCL) for automation of design tasks.
Strong cross-functional collaboration and communication skills for working with design, layout, verification, and technology development teams.
Experience with advanced technology nodes (e.g., 5nm, 3nm, or beyond).
Knowledge of SRAM compiler development and experience with low-power SRAM design techniques (e.g., power gating, voltage scaling).
Background in silicon debug and root-cause analysis.
You’re inclusive, adapting your style to the situation and diverse global norms of our people.
An avid learner, you approach challenges with curiosity and resilience, seeking data to help build understanding.
You’re collaborative, building relationships, humbly offering support and openly welcoming approaches.
Innovative and creative, you proactively explore new ideas and adapt quickly to change.

Responsibilities

Design and develop SRAM memory arrays, including bit cells, sense amplifiers, decoders and control circuits for advanced process nodes (e.g., 2nm, 3nm and 5nm).
Optimize SRAM designs for performance, power and area (PPA) and yield.
Develop custom layouts and perform physical design verifications (e.g., DRC, LVS).
Evaluate trade-offs between speed, power, and area to meet design targets.
Develop and improve SRAM design methodologies, including automation scripts for design, simulation, and verification.
Work with product and test engineers to develop test plans and support silicon bring-up.
Mentor Junior engineers, providing guidance on SRAM design techniques and best practices.
Perform extensive circuit simulations using tools like HSPICE, finesim or cadence Spectre to validate SRAM functionality and performance.
Contribute to patents, technical papers, or industry conferences to advance SRAM technology.