Senior Principal Engineer

Renesas Electronics•San Jose, CA
•Onsite

About The Position

Renesas is seeking a Power Design Engineer to lead development of test vehicles supporting high-current BCD (Bipolar-CMOS-DMOS) and low-voltage GaN power process and product portfolios. The role owns test vehicle definition, circuit and layout design, and characterization planning from concept through silicon bring-up, working closely with process development, product engineering, and applications teams. The ideal candidate has hands-on experience designing power devices and circuits at both IC and module level and understands the power topologies the test vehicles are intended to support. Renesas is an embedded semiconductor solution provider with a global team of more than 21,000 engineers and problem solvers in over 30 countries. Its work spans Automotive, Industrial, Infrastructure, and IoT. Renesas describes its culture as TAGIE: Transparent, Agile, Global, Innovative, and Entrepreneurial. The company offers a competitive benefits package alongside salary; further details are provided during the hiring process. Renesas is an equal opportunity and affirmative action employer. The role may involve technology subject to U.S. export controls, and a U.S. government export license may be required for release to certain persons.

Requirements

  • Bachelor's or Master's degree in Electrical Engineering, Microelectronics, or a related field.
  • At least 10 years of hands-on design experience in power semiconductor devices, analog/power ICs, or power electronics.
  • Strong working knowledge of power conversion topologies, including buck, boost, multiphase/interleaved converters, half-bridge, and DrMOS/Intelli-Phase-style architectures, and how topology choices determine device requirements.
  • Solid understanding of power device physics and tradeoffs across BCD process technologies and GaN, particularly low-voltage GaN HEMTs, including RDS(ON), switching loss, gate charge, breakdown/avalanche behavior, and thermal characteristics.
  • Demonstrated experience designing test structures or test chips/vehicles for process technology development, including defining what a process node needs to prove out.
  • IC-level design and layout experience, including parasitic-sensitive layout practices for high-current switching nodes.
  • Experience taking designs beyond die level to module, package, or board level, such as power module co-design, evaluation board layout, or thermal/electrical co-design.
  • Proficiency with circuit simulation tools such as SPICE or equivalent, and familiarity with device/TCAD simulation concepts.
  • Ability to interpret and specify absolute maximum ratings, transient voltage tolerance, and protection thresholds (OVP/UVP/OCP/OTP) relevant to power-stage reliability.
  • Strong laboratory skills in bring-up, debugging, and characterization using oscilloscopes, curve tracers, power analyzers, and thermal imaging.

Responsibilities

  • Define, design, and drive execution of test vehicles for high-current BCD and low-voltage GaN process technologies, including device test structures, scaled power stages, and full-function demonstration circuits.
  • Translate process capability targets and product roadmap requirements into test vehicle architecture and specifications.
  • Design and simulate power stage circuits, such as synchronous buck/boost, multiphase, half-bridge/DrMOS, and gate drivers, to validate device performance under realistic switching and thermal conditions.
  • Select and characterize LDMOS, trench MOSFETs, low-voltage GaN HEMTs, and Schottky/synchronous rectifiers for test structures, collaborating with device/process engineering on layout-dependent tradeoffs.
  • Perform IC-level layout and design for test structures, including parasitic-aware layout for switch nodes, current sensing, and gate-drive paths.
  • Extend designs to module and package level as needed, co-designing power stages with packaging, magnetics, and PCB layout for evaluation boards and system-level test vehicles.
  • Develop test and characterization plans covering DC parametrics, switching performance, efficiency, transient response, and voltage/current stress margins, including switch-node ringing and absolute-maximum validation.
  • Lead or support silicon bring-up and debugging, and correlate measured results against simulations and design targets.
  • Collaborate with process integration, reliability, product/applications engineering, and test engineering to connect process split data with product-ready specifications.
  • Document design methodology, test vehicle results, and characterization data to support technology qualification and product development decisions.

Benefits

  • Competitive benefits package; details will be provided during the hiring process.
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