RF Technology Development Engineer – Principal Engineer

GlobalFoundries•Essex Junction, VT

20h•Onsite

About The Position

GlobalFoundries' RF Technology Development Organization is looking for a device and integration engineer in developing semiconductor technologies to join our RF team in Essex Junction, VT. This role is responsible for the development, optimization, and qualification of FEOL and BEOL semiconductor devices and processes to meet performance, cost, and yield requirements. The engineer will design, electrically characterize, and analyze RF devices including FET, bipolar, diodes, and passives. They will conduct theoretical studies or simulations to optimize device performance and benchmark it against state-of-the-art technologies. Responsibilities also include DC and RF characterization and analysis, DOE design, execution, and analysis of results. The role involves partnering with unit process module engineers, failure analysis, and the characterization team to improve device performance and yield, owning and driving technical process problem-solving, and interacting with internal and external customers. Additionally, the engineer will establish new technology design rules, test structures, and test methodologies, and innovate new methods for continuous process/device improvement. All activities must be performed in a safe and responsible manner, supporting all Environmental, Health, Safety & Security requirements and programs.

Requirements

Graduating with Master’s or PhD in Electrical, Materials Science, or other relevant engineering or physical science discipline from an accredited degree program.
Background in CMOS device physics, semiconductor processing, and characterization
Strong data analysis skills
Excellent interpersonal skills, both oral and written
Must have at least an overall 3.0 GPA and proven good academic standing.
Language Fluency - English (Written & Verbal)

Nice To Haves

Experience in Silicon or SiGe BiCMOS FEOL or BEOL processing and/or semiconductor process development
Experience in RF device design and characterization including high frequency design, measurement and analysis
Experience with Cadence or any other layout and simulation tool
Prior related internship or co-op experience.
Demonstrated prior leadership experience in the workplace, school projects, competitions, etc.
Project management skills, i.e. the ability to innovate and execute solutions that matter; the ability to navigate ambiguity.
Strong written and verbal communication skills
Strong planning & organizational skills

Responsibilities

Responsible for development, optimization, and qualification of FEOL and BEOL semiconductor devices and processes to meet performance, cost and yield requirements
Design, electrical characterization and analysis of RF devices including FET, bipolar, diodes and passives.
Conduct theoretical studies or simulations to optimize the device performance and benchmark it against state of the art
Responsible for the DC and RF characterization and analysis including s-parameter, noise figure and loadpull
DOE design, execution, and analysis of results.
Partner with unit process module engineers, failure analysis and characterization team to improve device performance and yield
Own and drive technical process problem solving.
Interact with internal & external customers and respond to technical queries.
Establish new technology design rules, test structures and test methodologies.
Innovate new methods of continuous process/device improvement.
Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs.