RF Technology Development Device Engineer - MTS

GlobalFoundries•Essex, VT

57d•Onsite

About The Position

GlobalFoundries' RF Technology Development Organization is looking for a device and TCAD engineer with industry experience in developing semiconductor technologies to join our RF team in Essex Junction, VT. This role involves TCAD simulation, design, electrical characterization, and analysis of SiGe HBTs and RF CMOS devices. The engineer will conduct theoretical studies or simulations to optimize device performance, work closely with the process integration team for device fabrication, and establish new technology design rules, test structures, and methodologies. Responsibilities also include DC and RF characterization and analysis, including high power measurements, s-parameter and loadpull, owning and driving technical process problem solving, data analysis, and interacting with internal & external customers. The role emphasizes innovation in continuous process/device improvement and requires performing all activities in a safe and responsible manner, supporting all Environmental, Health, Safety & Security requirements.

Requirements

Master’s Degree or PhD in Electrical, Materials Science, or other relevant engineering or physical science discipline. BS + 6-7 years of experience or MS + 5-6 years or PhD + 3-4 years
3+ years in semiconductor device analysis and TCAD
Experience in Silicon CMOS or SiGe BiCMOS TCAD and device analysis
RF device design and characterization experience
Experience with Cadence or any other layout and simulation tool
Strong data analysis skills
Fluency in English Language – written & verbal
Ability to relocate to Essex Junction, VT

Nice To Haves

5+ Years of Experience in Silicon or SiGe BiCMOS TCAD and device analysis
Experience of leading a device or process development project
Experience in RF device design and characterization including high frequency design, measurement and analysis
Experience in noise figure and loadpull measurement and analysis
Excellent interpersonal skills, energetic, motivated, and self-driven
Demonstrate ability to work well within a global matrixed team or environment with minimal supervision
Outstanding communication skills - both written and verbal
Demonstrated ability to communicate well with all levels of the organization and experience in working with external constituencies
Strong organizational skills; demonstrated ability to manage multiple tasks simultaneously and able to react to shifting priorities to meet business needs
Demonstrated ability to meet deadlines and commitments

Responsibilities

TCAD simulation, design, electrical characterization and analysis of SiGe HBTs and RF CMOS devices
Conduct theoretical studies or simulations to optimize the device performance and benchmark it against state of the art
Work closely with process integration team for device fabrication work.
Establish new technology design rules, test structures and test methodologies
Responsible for the DC and RF characterization and analysis including high power measurements, s-parameter and loadpull
Own and drive technical process problem solving.
Data analysis
Team player
Interact with internal & external customers and respond to technical queries.
Innovate new methods of continuous process/device improvement.
Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements