RF Technology Development Device Engineer - MTS

GlobalFoundriesEssex Junction, VT
Onsite

About The Position

GlobalFoundries is a leading full-service semiconductor foundry with a global manufacturing footprint spanning three continents. GlobalFoundries' RF Technology Development Organization is looking for a device and TCAD engineer with industry experience in developing semiconductor technologies to join our RF team in Essex Junction, VT.

Requirements

  • Master’s Degree or PhD in Electrical, Materials Science, or other relevant engineering or physical science discipline. BS + 6-7 years of experience or MS + 5-6 years or PhD + 3-4 years
  • 3+ years in semiconductor device analysis and TCAD
  • Experience in Silicon CMOS or SiGe BiCMOS TCAD and device analysis
  • RF device design and characterization experience
  • Experience with Cadence or any other layout and simulation tool
  • Strong data analysis skills
  • Fluency in English Language – written & verbal
  • Ability to relocate to Essex Junction, VT

Nice To Haves

  • 5+ Years of Experience in Silicon or SiGe BiCMOS TCAD and device analysis
  • Experience of leading a device or process development project
  • Experience in RF device design and characterization including high frequency design, measurement and analysis
  • Experience in noise figure and loadpull measurement and analysis
  • Excellent interpersonal skills, energetic, motivated, and self-driven
  • Demonstrate ability to work well within a global matrixed team or environment with minimal supervision
  • Outstanding communication skills - both written and verbal
  • Demonstrated ability to communicate well with all levels of the organization and experience in working with external constituencies
  • Strong organizational skills; demonstrated ability to manage multiple tasks simultaneously and able to react to shifting priorities to meet business needs
  • Demonstrated ability to meet deadlines and commitments

Responsibilities

  • TCAD simulation, design, electrical characterization and analysis of SiGe HBTs and RF CMOS devices
  • Conduct theoretical studies or simulations to optimize the device performance and benchmark it against state of the art
  • Work closely with process integration team for device fabrication work.
  • Establish new technology design rules, test structures and test methodologies
  • Responsible for the DC and RF characterization and analysis including high power measurements, s-parameter and loadpull
  • Own and drive technical process problem solving.
  • Data analysis
  • Team player
  • Interact with internal & external customers and respond to technical queries.
  • Innovate new methods of continuous process/device improvement.
  • Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements

Benefits

  • Equal opportunity in the workplace
  • Cultural diversity within the company
  • Attraction and retention of highly qualified people
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