As a member of the RF Power Product Design team, the RF Power Amplifier Design Intern will work alongside experienced engineers who will provide mentorship, guidance, and opportunities for professional development. The intern will be based at the Morgan Hill Design Center and collaborate with a highly skilled team of RF engineers. The intern will initially support the design and evaluation of MACOM's high-power GaN transistor products for aerospace and defense applications. Through this work, the intern will gain experience in RF device handling, device biasing, RF measurements, data collection, and electromagnetic (EM) simulation. As a follow-on activity, the intern will design an impedance matching network for an RF power amplifier using either Microwave Office (MWO) or Advanced Design System (ADS) software to match the device to a 50-ohm environment. The intern will be responsible for creating the amplifier layout using AutoCAD, supporting fabrication activities, assembling and soldering components, and tuning the circuit in the RF laboratory. Measured amplifier performance will then be compared against simulation results to validate the design. This internship will provide valuable hands-on experience in a critical engineering discipline, enabling the intern to develop technical skills, build professional relationships, and take ownership of a meaningful engineering project.
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Career Level
Intern