Principal Engineer Technology Development (2027 New College Graduate)

GlobalFoundries•Essex Junction, VT

1d•$85,000 - $146,000•Onsite

About The Position

GlobalFoundries (GF) is a leading manufacturer of essential semiconductors, enabling AI at scale from the cloud to the physical world. Through deep partnerships with customers, GF delivers differentiated, power‑efficient and high‑performance solutions for high‑growth markets. With global manufacturing operations across the U.S., Europe and Asia, GF is a trusted and holistic technology partner for customers around the world. GF’s talented, global team remains focused every day on security, longevity and sustainability. We offer many full-time employment paths for recent graduates, which provide accelerated training in a fast-paced work environment, cross-functional working opportunities, and talent mobility. New college graduates are provided with mentorship, networking, and leadership opportunities, which give our new team members life-long connections and skills. We are seeking a highly motivated individual with interest in semiconductor process and device development to work with our Technology Development team in advancing world class differentiated semiconductor technologies for our 200mm manufacturing fabricator in Vermont (FAB9). New hires will immediately embed within our project teams of process, integration, and device engineers in developing new process flows in CMOS, SiGe, and GaN technologies, targeting new and improved RF applications.

Requirements

Ph.D. in Electrical Engineering, Solid State Physics, Microelectronics, Chemical Engineering, Material Science, or related field from an accredited degree program.
A basic knowledge of modern semiconductor device physics and device characterization, and of semiconductor processing.
Fluency in English Language – written & verbal.
Physical Capacity Demands – some amount of time required to work in a manufacturing clean room with product handling.
Proficiency in MSOffice and Statistical Analysis including Cpk, Design of Experiments.

Nice To Haves

Prior related internship or co-op experience.
Project management skills - the ability to innovate and execute solutions that matter; the ability to navigate ambiguity.
Strong planning & organizational skills.
Demonstrated ability to meet deadlines and commitments.
Strong written and verbal communication skills.
Excellent interpersonal skills, energetic, motivated, and self-driven.
Educational experience in modern device physics (FET, BJT, LDMOS, and HEMT devices, bulk and SOI device structures). Including associated electrical test and analysis methods of discrete device structures.
Experience in semiconductor processing in CMOS, SiGe, and/or GaN technologies for RF applications.

Responsibilities

Innovate with integration and device team members in driving the integration of advanced process modules to be used in the technology to meet performance, reliability, yield, and cost objectives.
Interact with various colleagues in the broader fab teams that support technology development work, including test/characterization, failure analysis, unit process, reliability, manufacturing, and other research organizations, to facilitate and achieve program success.
Support technology development qualification milestones from conception through manufacturing installation.
Support experimental design and execution.
Analyze experimental and performance results, including constructional analysis, and inline measurement summarization for manufacturing capability assessments and defect level assessments.
Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs.