NAND Quality and Reliability R&D Engineer

Solidigm•San Jose, CA

3d•$139,520 - $255,000•Hybrid

About The Position

Solidigm is a multibillion-dollar global company in the memory industry, headquartered in Rancho Cordova, California. We combine the strengths of an established technology company with the agility of a start-up, aiming to be the #1 NAND memory company worldwide. We view challenges as opportunities for innovation and are committed to a diverse, equitable, and inclusive culture. We are seeking dedicated professionals to help shape the future of our organization, contributing to a customer-inspired, trusting, innovative, team-oriented, inclusive, results-driven, collaborative, passionate, and flexible environment.

Requirements

Bachelor’s in electrical engineering, Microelectronics, or a closely related field.
2+ years of industry experience in semiconductor memory technologies and products.
Deep understanding of NAND cell and array operations, including array reliability physical mechanisms and characterization techniques.
Strong foundation in semiconductor device physics and process flows.
Proficiency in statistical analysis methodologies and tools.
Hands-on programming experience in C, C++, Python, and/or JMP.
Proven ability to thrive in a fast-paced, cross-functional team environment.
Strong analytical and problem-solving skills with attention to detail.
Excellent communication and presentation skills, with the ability to convey complex technical concepts to diverse audiences.

Nice To Haves

Master's or PhD in Electrical Engineering, Microelectronics, or a closely related field.
Experience with 3D NAND architecture and advanced memory scaling challenges.
Experience in SSD system level FW design and testing

Responsibilities

Design, plan, and execute NAND memory cell and array characterization experiments to evaluate performance and reliability.
Develop and optimize trims to minimize program and read disturb, directly impacting product quality.
Develop and optimize trims to optimize performance and power (tPROGRAM, tREAD, Icc), without impacting reliability and endurance capabilities.
Apply NAND device physics principles to explain and interpret relationships between experimental data and trim parameters.
Conduct comprehensive data analysis to identify and communicate trade-offs across multiple parameters of interest.
Use NAND device physics knowledge and problem-solving skills to design experiments, identify product failure mechanisms, and implement effective solutions.
Collaborate cross-functionally with Device, Design, Reliability, and Product/Test Engineering teams to design, test, and deeply innovative method to improve performance and reliability.