Memory PHY RTL Design Engineer

Advanced Micro Devices, Inc•Boxborough, MA

1d•Hybrid

About The Position

The Memory PHY team is looking for a passionate and experienced Design Engineer for RTL and Firmware development of high-speed LPDDR, DDR IPs. Be a part of the definition, design and development phase of industry-leading Memory PHYs and interface IP. This opportunity includes creation of new IO designs as well as working on multiple designs and enhancing methodologies in parallel. Be a part of a team that delivers Industry leading IP and help our experts in RTL, FW, circuit, and architecture teams develop leading edge and differentiating IPs.

Requirements

Digital design engineering experience
Experienced with Verilog, System Verilog, C, and C++
Excellent knowledge of Verilog, System Verilog and a scripting language; experience with Python, Perl and TCL is a plus
Knowledge of clocking architectures, synchronization, and CDC methodology
Experience with synthesis, Timing closure
SERDES, DDR, Memory Controller, or MAC Design experience is preferred
Proficient in debugging firmware and RTL code using simulation tools
Strong understanding of computer organization/architecture.
Mixed signal RTL, Low power design experience is a plus
Exposure to leadership or mentorship is an asset

Responsibilities

RTL design for memory I/O
PHY Digital Architecture development from pathfinding, coding, verification to physical implementation
PHY link layer design, implementation & verification with Analog and System architect.
PHY Analog/Digital co-design
Digital design and RTL coding
Timing Synthesis & Drive Physical implementation
Collaborate with architects, hardware engineers, and firmware engineers to understand the new features to be verified
Estimate the time required to write the new feature tests and any required changes to the test environment
Build the unit tests
Debug design failures to determine the root cause; work with DV and firmware engineers to resolve design defects and correct any test issues