The DRAM Engineering Group, IP Development team is responsible for delivering high-quality DRAM Intellectual Property solutions that enable next-generation AI, Mobile, Client, Data Center, and Graphics products. The team develops analog, mixed-signal, and high-speed interface circuits used across Micron’s future memory products, with a focus on predictable execution, design quality, reliability, and innovation across circuit design and verification flows. As an intern, you will work alongside experienced circuit designers to support the development of critical DRAM IP blocks used in upcoming memory solutions. This internship provides hands-on exposure to semiconductor circuit design, simulation, verification, physical design support, silicon validation, and advanced technology development. You will contribute to meaningful engineering projects while gaining experience using widely recognized EDA software, circuit modeling techniques, AI Assisted workflows, and multi-functional processes.
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Job Type
Full-time
Career Level
Intern
Education Level
Ph.D. or professional degree