GaN Device Characterization & Modeling Intern

MACOM•Lowell, MA

About The Position

MACOM is seeking an intern to assist with the characterization and modeling of GaN-on-SiC transistors. The intern will measure newly developed processes, extract and validate transistor models, summarize results, and help integrate models into process design kits (PDKs). They will collaborate with experienced engineers on a defined modeling project in a hands-on learning environment. Project may include: Measurement of transistor pullout structures. Extraction of linear and nonlinear transistor models. Preparation of model validation reports documenting results, limitations, and recommendations for device development. Integrate models into PDKs for EDA tools. Develop scripts for data processing, plotting, and model comparison.

Requirements

Pursuing a degree in electrical engineering, physics, or a related field
Some experience analyzing technical data using Python, MATLAB, or a similar tool
Ability to work with data, troubleshoot problems, and communicate findings clearly
Interest in GaN devices, transistor modeling, and circuit simulation

Nice To Haves

Familiarity with transistor I-V curves, S-parameters, or RF circuits
Experience with on-wafer measurement techniques
Familiarity with Keysight ADS or Cadence AWR Microwave Office
Exposure to GaN, III-V semiconductors, or compact models

Responsibilities

Measure newly developed processes
Extract and validate transistor models
Summarize results
Help integrate models into process design kits (PDKs)
Collaborate with experienced engineers on a defined modeling project
Measure transistor pullout structures
Extract linear and nonlinear transistor models
Prepare model validation reports documenting results, limitations, and recommendations for device development
Integrate models into PDKs for EDA tools
Develop scripts for data processing, plotting, and model comparison