This internship offers hands-on experience with state-of-the-art semiconductor material deposition using Molecular Beam Epitaxy (MBE), with a focus on GaN based materials. Interns will utilize various characterization techniques, including atomic force microscopy (AFM), Hall Effect, and Lehighton measurements, to assess the structural and electrical qualities of grown films. Each intern will be assigned a personalized project with the potential to influence business decisions at MACOM, supported by ongoing training and mentorship. The internship experience will conclude with a final poster presentation showcasing project outcomes.
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Career Level
Intern