DRAM Memory Design Engineer - Principal | MTS | SMTS

Micron Technology • Boise, ID

1d • Onsite

About The Position

Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. We are shaping the memory technologies that power today's most advanced computing platforms, from AI accelerators to mobile and client devices. Our DRAM Engineering team brings together skilled engineers across the globe to solve complex technical challenges, drive innovation, and deliver high-performance memory solutions. If you enjoy tackling difficult problems and turning ideas into products, you'll find exciting opportunities to make an impact here. As a Semiconductor Design Engineer (Principal / Member of Technical Staff / Senior Member of Technical Staff), you will play a key role in designing and optimizing next-generation DRAM products. You will work closely with global design, verification, and multi-functional teams to develop innovative circuit solutions that balance performance, power, quality, reliability, and cost. This role also offers the opportunity to influence technical direction, mentor engineers, and help advance future memory technologies.

Requirements

• Bachelor's degree in Electrical Engineering or related field, plus MSEE with 10+ years, BSEE with 12+ years, or equivalent relevant semiconductor design experience; SMTS candidates typically have 15+ years of experience with demonstrated technical leadership.
• Extensive knowledge of CMOS circuit design, device physics, state machine logic, and design verification methodologies.
• Experience with Verilog modeling, simulation tools, and power delivery network (PDN) analysis.
• Proficiency in scripting languages such as Python, Tcl, or Perl.
• Strong analytical, problem-solving, communication, and multi-functional collaboration skills.

Nice To Haves

• Master's degree or PhD in Electrical Engineering or a related field.
• Experience with DDR5, LPDDR5/LPDDR6, GDDR6/7, or HBM3/HBM4 memory technologies.
• Experience with FINESIM, HSPICE, or similar schematic entry and simulation tools.
• Experience leading complex circuit design projects and mentoring engineers.
• Exposure to AI/ML-assisted design flows, agentic AI, or advanced design automation frameworks.

Responsibilities

• Design and optimize digital and analog circuits for next-generation DRAM products, including memory arrays, control logic, datapaths, address decoding, and I/O circuitry.
• Lead circuit development, simulation, verification, and silicon validation to achieve performance, power, area, and quality targets.
• Drive floor-planning, layout optimization, parasitic analysis, and tape-out activities.
• Advance AI-assisted design, automation, and design-space exploration through collaboration with internal and external partners.
• Provide technical leadership through innovation, multi-functional collaboration, and mentorship of other engineers.

Benefits

• Choice of medical, dental and vision plans
• Benefit programs that help protect your income if you are unable to work due to illness or injury
• Paid family leave
• Robust paid time-off program
• Paid holidays

What This Job Offers

• Job Type: Full-time
• Career Level: Principal