Director, Ultra-High-Voltage SiC Device Technology

NAVITAS SEMICONDUCTOR USA, INC. • Torrance, CA

1d • $200,000 - $250,000 • Onsite

About The Position

Navitas Semiconductor is seeking a Director of Ultra-High-Voltage SiC Device Technology to own device and process technology for its ultra-high-voltage SiC roadmap, spanning 3.3 kV to 10 kV and beyond. The role covers MOSFETs, PiN diodes, JFETs, IGBTs, and other bipolar devices, taking concepts from simulation through development and qualification in collaboration with foundry and research partners.

Reporting to the SVP & Chief Technology Officer, the director will lead U.S. government-funded technology programs as technical lead and principal investigator, define technical plans and deliverables, and represent Navitas in program reviews. The role also directs device simulation, mask reviews, characterization and reliability methods, supports customers and business units on product definition, and contributes to the company's intellectual property. The position is based in Torrance, California, and includes mentoring engineers across U.S. and India sites.

Navitas describes its environment as fast-paced, collaborative, and high-energy, with access to leadership, cross-functional collaboration, and resources to innovate and execute. The company offers comprehensive health, dental, and vision coverage, unlimited PTO, and compensation that may include a performance bonus and equity awards. Base salary is $200,000–$250,000, depending on experience.

This position requires access to ITAR- and EAR-controlled technology and technical data. Applicants must be U.S. persons as defined in the posting: U.S. citizens, U.S. lawful permanent residents, or protected individuals under 8 U.S.C. 1324b(a)(3).

Requirements

• Ph.D. in Electrical Engineering, Physics, Materials Science, or a related field.
• 12 or more years of industrial or national-laboratory research and development in SiC power devices, focused on ultra-high-voltage switches.
• Demonstrated design, fabrication, and characterization of SiC devices rated at 3.3 kV or above, such as MOSFETs, BJTs, IGBTs, thyristors, or PiN diodes.
• Hands-on depth in SiC process technology, including implantation, oxidation, ohmic contacts, etching, and edge termination.
• Experience as technical lead or principal investigator on externally funded programs, including proposals, reporting, and milestone delivery.
• Strong record of publications and/or patents in SiC power devices.
• Must be a U.S. person: a U.S. citizen, U.S. lawful permanent resident, or protected individual under 8 U.S.C. 1324b(a)(3).
• Deep understanding of SiC device physics for blocking voltages from 3.3 kV to 10 kV and above, including drift-layer design, edge termination, and bipolar degradation.
• Strong knowledge of SiC process modules, including implantation and activation, gate oxidation, ohmic contacts, etching, and passivation.
• TCAD-driven device design and disciplined, data-driven experiment planning.
• Familiarity with high-voltage test and reliability methods, including HTRB, HTGB, avalanche, and short circuit.
• Strong analytical and problem-solving skills.
• Excellent technical writing and communication skills, including proposal writing and government program reporting.
• Ability to work with foundries, research institutes, and teams across global time zones; leads by example.

Nice To Haves

• Experience with SiC integrated circuits or high-temperature SiC electronics.
• Experience with bipolar SiC devices and their reliability, including bipolar degradation and basal plane dislocation control.
• Experience with U.S. Department of Defense or Department of Energy programs.
• Experience transferring device technology to a commercial 150 mm or 200 mm SiC foundry.
• Experience leading engineers across multiple sites and time zones.

Responsibilities

• Lead device architecture and process technology for ultra-high-voltage SiC devices rated from 3.3 kV to 10 kV and beyond, including MOSFETs, PiN diodes, JFETs, IGBTs, and other bipolar devices.
• Serve as technical lead and principal investigator on U.S. government-funded development programs; define technical plans, own deliverables and milestones, and represent Navitas in program reviews.
• Define process flows and key process modules with foundry and research partners, including implantation and activation, gate oxide, ohmic contacts, edge termination, and passivation; drive split-lot experiments to completion.
• Direct device simulation using TCAD, mask design reviews, and characterization plans, and translate results into design and process changes.
• Establish ultra-high-voltage characterization and reliability methods, including HTRB, HTGB, avalanche, and short-circuit ruggedness, in coordination with reliability and test teams.
• Mentor device engineers across U.S. and India sites and help grow the ultra-high-voltage SiC team.
• Develop Navitas' intellectual property through patents and selected publications.
• Support customers and business units on ultra-high-voltage product definition.

Benefits

• Comprehensive health coverage.
• Dental coverage.
• Vision coverage.
• Unlimited PTO.
• Competitive compensation package including a performance bonus and equity awards.
• Access to leadership, cross-functional collaboration, and resources to innovate and execute.

What This Job Offers

• Job Type: Full-time
• Career Level: Director
• Education Level: Ph.D. or professional degree