Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. The Heterogeneous Integration Group (HIG) within Micron's Technology and Products Group (TPG) leads the development of High Bandwidth Memory (HBM) solutions for AI and ML applications. Our modern designs use Through Silicon Via (TSV) technology. We stack multiple DRAM chips on a high-speed memory controller with a coordinated logic chip in one package. This new way improves memory density and bandwidth through parallelization. It aims to deliver the lowest power per bit solutions in the industry. Micron is seeking a Design Infrastructure Engineer to build, enable, and scale characterization infrastructure and deliver generated IP to multiple advanced memory and logic designs. This role involves characterizing standard and custom cells across multiple process technologies. These cover Micron internal nodes and external foundries, including TSMC. The role supports several HBM product lines, including HBM DRAM dies, Logic dies (JEDEC and custom variants), and advanced 3D HBM architectures. You will operate at the intersection of circuit design, EDA infrastructure, and silicon validation readiness, delivering robust, scalable, and high-quality characterization flows that directly impact timing closure, power modeling, and product quality across next-generation HBM programs.
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Job Type
Full-time
Career Level
Mid Level