Our vision is to transform how the world uses information to enrich life for all. Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Our vision is to transform how the world uses information to enrich life for all. Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever ! The Heterogeneous Integration Group (HIG) is a division within the Technology and Products Group (TPG). We are dedicated to developing and optimizing High Bandwidth Memory (HBM) solutions for AI and ML applications. Using Through Silicon Via (TSV) technology, we stack multiple DRAM chips with a high-speed interface die, significantly increasing memory density and bandwidth for next-generation AI/ML accelerators and high-performance computing platforms. Our designs target the industry's lowest power-per-bit and highest bandwidth, enabling the most demanding compute workloads. We are looking for a Principal Engineer in HBM IO Design Architecture to serve as the technical authority for IO circuit design, PHY architecture, TSV-based link design, and IO training on Micron's HBM products. You will lead complex, multi-disciplinary IO design initiatives spanning multiple HBM product generations — from TSV link scheme definition and PHY circuit architecture through IO training feature design and silicon validation. Bringing deep expertise in analog/mixed-signal CMOS build, high-speed TSV IO, and IO training algorithms, you will lead technical innovation. You will define development standards across the organization. You will ensure Micron's HBM IO architecture remains the industry benchmark for speed, power efficiency, and quality.
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Job Type
Full-time
Career Level
Principal