About The Position

In this position, the individual will be responsible for designing, developing, modifying and evaluating Chip architecture and Core/Analog/Data Path circuit structures for feasibility study of high performance NAND flash, including new, most advanced 3-dimentional NAND memories. Evaluation of these circuits will be done through HSPICE, PRIMESIM and VERILOG simulations and through silicon evaluation when the silicon arrives.

Requirements

  • Requires MS or BS degree in Electrical Engineering or equivalent with 3 or more years of relevant experience or PHD+2yr experience is desired.
  • A strong design & device background and experience with evaluating new process technologies for use in design is preferred.
  • The ideal candidate must have proven ability to achieve results in a fast moving, dynamic environment
  • Self-motivated and self-directed, however, must have demonstrated ability to work well with people
  • A proven desire to work as a team member, both on the same team and outside of the team
  • Ability to troubleshoot and analyze complex problems.
  • Ability to multi-task and meet deadlines.
  • Excellent communication (written and verbal) and interpersonal skills.

Nice To Haves

  • Knowledge and/or experience in non-volatile memory design (NAND flash memory cell operation in particular) is a big advantage

Responsibilities

  • designing, developing, modifying and evaluating Chip architecture
  • designing, developing, modifying and evaluating Core/Analog/Data Path circuit structures for feasibility study of high performance NAND flash, including new, most advanced 3-dimentional NAND memories.
  • Evaluation of these circuits through HSPICE, PRIMESIM and VERILOG simulations
  • Evaluation of circuits through silicon evaluation when the silicon arrives.

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What This Job Offers

Job Type

Full-time

Career Level

Mid Level

Number of Employees

5,001-10,000 employees

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