Senior Staff MOCVD Development Engineer

Renesas Electronics • Goleta, CA

2d • Hybrid

About The Position

The Senior Staff MOCVD Development Engineer will lead process and hardware development for GaN-based epitaxial growth on silicon and sapphire substrates, enabling next-generation power devices. This role emphasizes deep technical understanding of MOCVD reactor behavior, GaN heterostructure engineering, and epitaxial integration for p-GaN and e-mode (enhancement-mode) device architectures. The ideal candidate combines strong experimental rigor, demonstrated materials expertise, and cross-functional leadership to translate research concepts into production-capable processes. Responsibilities: Develop, optimize, and transfer MOCVD epitaxial processes for GaN-on-Si and GaN-onSapphire wafers, focusing on high-performance device layers targeting e-mode (p-GaN gate) and HEMT applications. Design and execute development roadmaps for buffer structure engineering, strain management, and defect reduction to achieve target breakdown voltages, leakage, and mobility metrics. Lead process integration studies addressing p-type activation, Mg incorporation, compensation control, and interface optimization for gate reliability. Drive reactor-scale modeling and hardware tuning to improve growth uniformity, thickness control, and wafer bow mitigation on large-diameter substrates. Analyze defect physics mechanisms (threading dislocations, V-defects, point defects) affecting device reliability and performance, driving iterative improvements in process conditions. Design and execute structured experiments (DOE-based) to deconvolve multi-parameter interactions in reactor conditions, precursor chemistry, and thermal profiles. Characterize epitaxial films using XRD, AFM, TEM, PL, CV, and Hall measurements, correlating data to growth parameters and device performance. Collaborate closely with device engineers and reliability teams to co-optimize epitaxial structures for threshold voltage, dynamic Ron, off-state leakage, and long-term stability Translate device performance specifications and reliability requirements into detailed epitaxial process and material specifications; document Process of Record (PoR) and engineering specifications for qualification and manufacturing handoff. Support failure analysis, root cause investigations, and corrective action implementation for process-related device excursions or reliability issues. Lead process transfer activities from R&D to pilot or production-scale reactors, ensuring knowledge capture and robust parameter windows

Requirements

• Ph.D. in Materials Science, Electrical Engineering, Physics, or closely related discipline. M.S. with 10+ years of directly relevant hands-on experience.
• Minimum 8+ years of direct hands-on MOCVD process development and optimization for III-V or III-nitride semiconductor materials (GaN, AlGaN, InGaN, etc.).
• Demonstrated technical expertise in GaN-on-Si and/or GaN-on-Sapphire heterostructures, including buffer layer design, strain engineering, and defect reduction strategies.
• Strong experience developing p-type GaN epitaxy and e-mode device architectures, with deep understanding of Mg activation, dopant diffusion control, and gate stack engineering for threshold voltage stability.
• Proficiency with advanced epitaxial layer characterization techniques (XRD, SIMS, CL, TEM, PL, Hall effect measurements) and ability to interpret results to guide process optimization.
• Track record of designing complex DOEs, executing structured experiments, conducting statistical analysis (SPC, multivariate data interpretation), and drawing evidence-based conclusions.
• Demonstrated success in transferring epitaxial processes from R&D to pilot or high-volume manufacturing environments, with understanding of manufacturability constraints and yield optimization.
• Excellent written and verbal communication skills.

Nice To Haves

• Experience with multiple MOCVD platforms (e.g., Aixtron G5, G4, or Veeco Propel systems) - preferred
• Familiarity with GaN power device design requirements and performance metrics - preferred
• Prior leadership or mentoring experience in an R&D or manufacturing engineering environment -preferred

Responsibilities

• Develop, optimize, and transfer MOCVD epitaxial processes for GaN-on-Si and GaN-onSapphire wafers, focusing on high-performance device layers targeting e-mode (p-GaN gate) and HEMT applications.
• Design and execute development roadmaps for buffer structure engineering, strain management, and defect reduction to achieve target breakdown voltages, leakage, and mobility metrics.
• Lead process integration studies addressing p-type activation, Mg incorporation, compensation control, and interface optimization for gate reliability.
• Drive reactor-scale modeling and hardware tuning to improve growth uniformity, thickness control, and wafer bow mitigation on large-diameter substrates.
• Analyze defect physics mechanisms (threading dislocations, V-defects, point defects) affecting device reliability and performance, driving iterative improvements in process conditions.
• Design and execute structured experiments (DOE-based) to deconvolve multi-parameter interactions in reactor conditions, precursor chemistry, and thermal profiles.
• Characterize epitaxial films using XRD, AFM, TEM, PL, CV, and Hall measurements, correlating data to growth parameters and device performance.
• Collaborate closely with device engineers and reliability teams to co-optimize epitaxial structures for threshold voltage, dynamic Ron, off-state leakage, and long-term stability
• Translate device performance specifications and reliability requirements into detailed epitaxial process and material specifications; document Process of Record (PoR) and engineering specifications for qualification and manufacturing handoff.
• Support failure analysis, root cause investigations, and corrective action implementation for process-related device excursions or reliability issues.
• Lead process transfer activities from R&D to pilot or production-scale reactors, ensuring knowledge capture and robust parameter windows

Benefits

• Renesas offers a full range of elective benefits including medical, health savings account (with applicable medical plan), dental, vision, health and/or dependent care flexible spending accounts, pre-tax commuter benefits, life insurance, AD&D, and pet insurance.
• In addition to elective benefit options, benefited employees receive company-paid life insurance and AD&D, LTD, short term medical benefits as well as paid sick time, paid holidays, and accrued paid vacation.
• New employees will attend a detailed benefit orientation to learn more about our many benefits and resources

What This Job Offers

• Job Type: Full-time
• Career Level: Senior
• Education Level: Ph.D. or professional degree