Process Development Engineer

Texas Instruments•Dallas, TX

About The Position

Being responsible for SRAM memory device development, you will join a small development team with talented and driven contributors to deliver high-density, production-worthy, reliable memory technology on schedule and within budget. You will work with development wafer fabrication facilities to manage device definition, creation, demonstration, and delivery and work with multiple design groups to capture requirements and to evaluate tradeoffs providing a unique opportunity to create SRAM memory solutions for TI customers. Highly visible position interacting with multiple business groups, development groups, and fabrication facilities. You will be involved in innovative pathfinding projects. Opening is within Advanced Technology Development Department of the Technology and Manufacturing Group.

Requirements

Master of Science degree in Electrical Engineering or related degree
10 + years of relevant experience with solid understanding of CMOS and memory process flows and device integration, SRAM operation, and reliability
Demonstratable experience and ability to simulate SRAM bitcells (process, electrical, and circuit levels) for transistor design, bitcell functionality and margin

Nice To Haves

Knowledge of memory device physics, including non-volatile memory devices
Circuit design engineering background
Knowledge of Spectre simulation and Cadence design/layout tools
Knowledge and user of data analysis tools including JMP, Spotfire, Dataware, etc. as well as parsing code languages such as PERL, and Python
Ability to organize tasks and manage schedules while working simultaneously with multiple organizations and multiple management chains.
Hands-on person willing to take ownership
Working knowledge of yield and data analysis
Good communication and documentation skills
Ability to drive for success and thrive in a fast-paced development environment with multiple shifting priorities