Principal IO Design Architect, HBM

Micron • Richardson, TX

1d

About The Position

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. The High-Performance Integrated Group (HIG) is a division within the Technology and Products Group (TPG). We are dedicated to developing and optimizing High Bandwidth Memory (HBM) solutions for AI and ML applications! Our ultimate goal is to deliver the lowest power per bit solutions in the industry! Position Overview: We are searching for a Principal HBM IO Architecture Design engineer own the development of the PHY IO on the interface die in HBM products. In this position, you will be responsible for the development including defining design target, developing spec, architecting IO/clocking/datapath, being responsible for design, optimization, and verification. Use of both analog and digital CMOS design skills will be needed to work on the various circuits you would be responsible for. You will be part of a highly multi-functional team of technical domain experts collaborating closely with a distributed team of Design Engineering, Product Engineering, Process Development, Package Engineering & Business Units to implement a common goal of ensuring our future HBM roadmap is successful.

Requirements

• Prior industrial experience in high-speed clocking design at 16Gbps+ speed
• Good IO circuit design background with familiarity of both, analog and digital design and simulation experience required
• Solid knowledge of IO design principles for practical design tradeoffs on speed/area/power/complexity
• Experience with circuit verification and optimization including layout verification and parasitic extractions of the circuits
• Familiar with one or more off-chip protocols such as UCIe, HBM, DDR, PCIe, MIPI, etc
• Good understanding on FinFET device characteristics and hands-on design experience
• Excellent problem-solving and analytical skills
• Strong communication skills with the ability to clearly convey sophisticated technical concepts to other design peers both verbally and written
• Minimum 5+ years of proven experience in the Memory industry with an MS EE degree, or 7+ years with a BS EE or equivalent experience.

Nice To Haves

• Understanding of device physics and basic CMOS processing techniques preferred
• Prior circuit debug experience through Product Engineering or equivalent preferred
• D2D design experience is a plus
• Familiar with IP level verification and strong RTL debugging capabilities is a plus

Responsibilities

• IO and datapath design architect for HBM products
• Design low-power high-speed Tx, Rx, clock tree
• Analyze timing jitter and variation to improve speed and optimize design
• Contribute to cross group communication to work towards standardization and group success
• Proactively solicit guidance from Standards, CAD, modeling, and verification groups to ensure the design quality
• Drive innovation into the future Memory generation with multifaceted work environment

Benefits

• Micron benefits are designed to help you stay well, provide peace of mind and help you prepare for the future.
• We offer a choice of medical, dental and vision plans in all locations enabling team members to select the plans that best meet their family healthcare needs and budget.
• Micron also provides benefit programs that help protect your income if you are unable to work due to illness or injury, and paid family leave.
• Additionally, Micron benefits include a robust paid time-off program and paid holidays.
• For additional information regarding the Benefit programs available, please see the Benefits Guide posted on micron.com/careers/benefits .

What This Job Offers

• Job Type: Full-time
• Career Level: Principal
• Number of Employees: 5,001-10,000 employees