Spring 2026 - GaN Technology Development Intern

onsemi • Scottsdale, AZ

1d

About The Position

An internship at onsemi offers a dynamic opportunity to gain hands-on experience through real-world projects that drive innovation in the semiconductor industry. Interns are entrusted with meaningful responsibilities and exposed to cutting-edge technologies, fostering both technical skill development and professional growth. onsemi views internships as a strategic pipeline for entry-level career positions, providing a collaborative and inclusive environment where interns work alongside diverse teams and contribute to high-impact initiatives. The company’s commitment to sustainability, including its goal of achieving net-zero emissions by 2040, enables interns to engage in projects that align with global environmental priorities. Key benefits include: Competitive compensation and medical benefits Flexible work hours aligned with academic schedules Access to Employee Resource Groups (ERGs) which foster a sense of belonging and provide opportunities for mentorship and community engagement Networking events, professional development workshops, and project showcases that build career readiness and visibility across the organization Internship roles span multiple disciplines including engineering, business operations, data analytics, and finance, and are designed to align with onsemi’s strategic goals of innovation and workforce development. Structured programs such as rotational field sales and finance analyst tracks offer additional career pathways for interns transitioning into full-time roles.

Requirements

• To be considered for an internship, you must be currently enrolled in a degree seeking program.
• This position is specifically looking for someone who will be enrolled in PhD Program in EE/Physics/Materials with research focus on Gallium Nitride HEMTs.
• Proficiency with Synopsys Sentaurus TCAD: deck creation, meshing/convergence, calibrated models, and automation (SWB/DeckBuild; sdevice/sprocess).

Responsibilities

• Reporting to the Director of Lateral GaN Technology Development, you’ll build simulation decks, run parametric sweeps, analyze data, and help connect device physics to process integration.
• Set up 2D TCAD decks (using Synopsys Sentaurus) for lateral power GaN HEMTs.
• Compare simulation results to measured device data to calibrate models (e.g., trap densities, polarization charge, contact resistance).
• Apply tweaks in device design & investigate the effect to device performance through TCAD.

Benefits

• Competitive compensation and medical benefits
• Flexible work hours aligned with academic schedules
• Access to Employee Resource Groups (ERGs) which foster a sense of belonging and provide opportunities for mentorship and community engagement
• Networking events, professional development workshops, and project showcases that build career readiness and visibility across the organization

What This Job Offers

• Career Level: Intern
• Education Level: Ph.D. or professional degree
• Number of Employees: 5,001-10,000 employees