About The Position

Shape the Future of AI with Advanced Circuit Design! Are you passionate about pushing the boundaries of semiconductor technology? Join TSMC's cutting-edge R&D team as a Summer Circuit Designer Intern. You'll gain hands-on experience designing high-performance, low-power SRAM solutions critical for next-generation High-Performance Computing (HPC), AI, and groundbreaking Compute-in-Memory applications. This is a unique opportunity to work closely with industry-leading experts and contribute to innovations that will define the future of technology.

Requirements

  • Currently pursuing a master’s degree or PhD in electrical engineering, Computer Engineering, or a related field.
  • Strong academic background with relevant coursework in Circuit Design, VLSI, Digital IC Design, or Memory Design.
  • Familiarity with digital design concepts and EDA tools (e.g., Verilog, VHDL, SPICE, PrimeTime, Cadence Virtuoso, Synopsys Custom Compiler – customize tools here if appropriate).
  • Demonstrated understanding of CMOS fundamentals, logic design, and semiconductor physics.

Nice To Haves

  • Proven academic and/or research capability in advanced circuit design.
  • Strong problem-solving skills and a genuine enthusiasm for tackling complex scientific and engineering challenges.
  • Excellent communication and collaboration skills to thrive in a fast-paced R&D environment.
  • Prior experience with scripting languages (e.g., Python, Perl) for automation.

Responsibilities

  • Hands-on design and optimization of advanced SRAM memory circuits, including Design-for-Test (DFT) and innovative power management circuits.
  • Comprehensive circuit analysis using industry-standard tools for timing/power simulation, circuit logic verification, robustness analysis, and IR/EM flow.
  • Exploration of new devices, circuits, and applications, pushing the limits of semiconductor technology for HPC, AI, and Compute-in-Memory.
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